Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS

 

All Publications

Page 7 of 10

2001

  • Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy
    Bright AN and Humphreys CJ
    Philosophical Magazine B, Taylor & Francis vol. 81 (11), 1725-1744.  
    01-11-2001
  • Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
    Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW
    Applied Physics Letters, Aip Publishing vol. 79 (16), 2594-2596.  
    15-10-2001
  • Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
    Cho HK, Lee JY, Kim CS, Yang GM, Sharma N and Humphreys C
    Journal of Crystal Growth, Elsevier vol. 231 (4), 466-473.  
    01-10-2001
  • Chemical mapping of InGaN MQWs
    Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A and Humphreys C
    Journal of Crystal Growth, Elsevier vol. 230 (3-4), 438-441.  
    01-09-2001
  • Material optimisation for AlGaN/GaN HFET applications
    Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque J-L and Humphreys C
    Journal of Crystal Growth, Elsevier vol. 230 (3-4), 573-578.  
    01-09-2001
  • Observation of thermally activated conduction at a GaN–sapphire interface
    Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ and Thrush EJ
    Applied Physics Letters, Aip Publishing vol. 79 (8), 1121-1123.  
    20-08-2001
  • Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis)
    Ofori AP and Humphreys CJ
    Microscopy and Microanalysis, Oxford University Press (Oup) vol. 7 (S2), 346-347.  
    01-08-2001
  • Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells
    Keast VJ, Sharma N, Kappers M and Humphreys CJ
    Microscopy and Microanalysis, Oxford University Press (Oup) vol. 7 (S2), 1182-1183.  
    01-08-2001
  • Effects of electron-beam exposure on a ruthenium nanocluster polymer
    Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N and Humphreys C
    Journal of Applied Physics, Aip Publishing vol. 90 (2), 947-952.  
    15-07-2001
  • Local symmetry and bonding effects on electron energy-loss near-edge structures: Ab initio study of an NiAl grain boundary
    Pankhurst DA, Botton GA and Humphreys CJ
    Physical Review B, American Physical Society (Aps) vol. 63 (20) 
    08-05-2001
  • Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals
    Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ
    Materials Science and Engineering B, Elsevier vol. 81 (1-3), 19-22.  
    01-04-2001
  • Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
    Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ and Davies R
    Journal of Applied Physics, Aip Publishing vol. 89 (6), 3143-3150.  
    15-03-2001
  • A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
    Bright AN, Tricker DM, Humphreys CJ and Davies R
    Journal of Electronic Materials, Springer Nature vol. 30 (3), l13-l16.  
    01-03-2001
  • Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells
    Sharma N, Cho HK, Lee JY and Humphreys CJ
    Mrs Advances, Springer Nature vol. 667 (1) 
    01-01-2001
  • Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy
    Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD and Humphreys CJ
    Thin Solid Films, Elsevier vol. 381 (2), 231-235.  
    01-01-2001

2000

  • Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists
    Saifullah MSM, Kurihara K and Humphreys CJ
    Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 18 (6), 2737-2744.  
    01-11-2000
  • Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure
    Botton GA, Nishino Y and Humphreys CJ
    Intermetallics, Elsevier vol. 8 (9-11), 1209-1214.  
    01-09-2000
  • Chemical mapping and formation of V-defects in InGaN multiple quantum wells
    Sharma N, Thomas P, Tricker D and Humphreys C
    Applied Physics Letters, Aip Publishing vol. 77 (9), 1274-1276.  
    28-08-2000
  • The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy
    Pekarskaya E, Botton GA, Jones CN and Humphreys CJ
    Intermetallics, Elsevier vol. 8 (8), 903-913.  
    01-08-2000
  • The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl
    Pankhurst DA, Botton GA and Humphreys CJ
    Microscopy and Microanalysis, Oxford University Press (Oup) vol. 6 (S2), 186-187.  
    01-08-2000
  • Facing up to the future of materials science and technology
    Humphreys C
    Materials World vol. 8 (4), 11-13.  
    01-01-2000
  • Oxbridge and the public schools
    Humphreys C
    Materials World vol. 8 (1), 2-3.  
    01-01-2000
  • THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL
    Humphreys C
    Vetus Testamentum, Brill Academic Publishers vol. 50 (3), 323-328.  
    01-01-2000

1999

  • Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3
    Saifullah MSM, Botton GA, Boothroyd CB and Humphreys CJ
    Journal of Applied Physics, Aip Publishing vol. 86 (5), 2499-2504.  
    01-09-1999
  • Electrons seen in orbit
    Humphreys CJ
    Nature, Springer Nature vol. 401 (6748), 21-22.  
    01-09-1999
  • A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy
    Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A and Richter W
    Journal of Materials Research, Springer Nature vol. 14 (8), 3226-3236.  
    01-08-1999
  • Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
    Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ, Larsen PK, Grzegory I and Porowski S
    Journal of Crystal Growth, Elsevier vol. 204 (4), 419-428.  
    01-08-1999
  • The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy
    Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD and Richter W
    Journal of Materials Research, Springer Nature vol. 14 (5), 2036-2042.  
    01-05-1999
  • Energy‐filtered transmission electron microscopy of multilayers in semiconductors
    LIU , BOOTHROYD and HUMPHREYS
    Journal of Microscopy, Wiley vol. 194 (1), 58-70.  
    01-04-1999
  • Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images
    LIU , PRESTON , BOOTHROYD and HUMPHREYS
    Journal of Microscopy, Wiley vol. 194 (1), 171-182.  
    01-04-1999
  • A two-phase charge-density real-space-pairing model of high-Tc superconductivity
    Humphreys CJ
    Acta Crystallographica Section a: Foundations of Crystallography vol. 55 (2 PART I), 228-233.  
    01-03-1999
  • A two-phase charge-density real-space-pairing model of high-Tc superconductivity
    Humphreys C
    Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 55 (Pt 2 Pt 1), 228-233.  
    01-03-1999
  • A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy
    Walther T and Humphreys CJ
    Journal of Crystal Growth, Elsevier vol. 197 (1-2), 113-128.  
    01-02-1999
  • Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon
    Smith JP, Eccleston W, Brown PD and Humphreys CJ
    Journal of The Electrochemical Society, The Electrochemical Society vol. 146 (1), 306-312.  
    01-01-1999
  • Structure and Climb of Faulted Dipoles in GaAs
    Yonenaga I, Lim S, Shindo D, Brown PD and Humphreys CJ
    Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 171 (1), 53-57.  
    01-01-1999
  • Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials
    Chen GS and Humphreys CJ
    Journal of Applied Physics, Aip Publishing vol. 85 (1), 148-152.  
    01-01-1999

1998

  • Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs
    Lim S-H, Shindo D, Yonenaga I, Brown PD and Humphreys CJ
    Physical Review Letters, American Physical Society (Aps) vol. 81 (24), 5350-5353.  
    14-12-1998
  • High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux
    Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ
    Japanese Journal of Applied Physics, IOP Publishing vol. 37 (12R) 
    01-12-1998
  • Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutions
    Ogawa H, Watanabe M, Ohsato H and Humphreys C
    IEEE International Symposium On Applications of Ferroelectrics, 517-520.  
    01-12-1998
  • Stuff of dreams
    Humphreys C
    New Scientist vol. 157 (2126), 44-45.  
    01-12-1998
  • Climb of dislocations in GaAs by irradiation
    Yonenaga I, Brown PD and Humphreys CJ
    Materials Science and Engineering A, Elsevier vol. 253 (1-2), 148-150.  
    01-09-1998
  • Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys
    Nishino Y, Inkson BJ, Ogawa T and Humphreys CJ
    Philosophical Magazine Letters, Taylor & Francis vol. 78 (2), 97-103.  
    01-08-1998
  • Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures
    Chen GS, Boothroyd CB and Humphreys CJ
    The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 78 (2), 491-506.  
    01-08-1998
  • Shaping the future of materials science
    Humphreys C
    Materials World vol. 6 (6), 352-355.  
    01-06-1998
  • Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy
    Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y and Humphreys CJ
    Journal of Applied Physics, Aip Publishing vol. 83 (10), 5504-5508.  
    15-05-1998
  • Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
    Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ and Sutton AP
    Physical Review B, American Physical Society (Aps) vol. 57 (3), 1505-1509.  
    15-01-1998
  • Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions
    Pekarskaya E, Jones CN and Humphreys CJ
    Mrs Advances, Springer Nature vol. 552 (1) 
    01-01-1998
  • Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory
    Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ and Temmerman WM
    Mrs Advances, Springer Nature vol. 552 (1) 
    01-01-1998
  • High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux
    Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R and Humphreys CJ
    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers vol. 37 (12A), 6556-6561.  
    01-01-1998
  • Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutions
    Watanabe M, Ogawa H, Ohsato H and Humphreys C
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers vol. 37 (9 PART B), 5360-5363.  
    01-01-1998

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