Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 7 of 10
2001
- Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy
Bright AN, Humphreys CJ
Philosophical Magazine B, Informa Uk Limited vol. 81 (11), 1725-1744.
01-11-2001 - Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW
Applied Physics Letters, Aip Publishing vol. 79 (16), 2594-2596.
15-10-2001 - Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C
Journal of Crystal Growth, Elsevier Bv vol. 231 (4), 466-473.
01-10-2001 - Chemical mapping of InGaN MQWs
Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T et al.
Journal of Crystal Growth, Elsevier Bv vol. 230 (3-4), 438-441.
01-09-2001 - Material optimisation for AlGaN/GaN HFET applications
Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L et al.
Journal of Crystal Growth, Elsevier Bv vol. 230 (3-4), 573-578.
01-09-2001 - Observation of thermally activated conduction at a GaN–sapphire interface
Mavroidis C, Harris JJ, Kappers MJ, Sharma N, Humphreys CJ, Thrush EJ
Applied Physics Letters, Aip Publishing vol. 79 (8), 1121-1123.
20-08-2001 - Atomic Site Occupancy of Platinum Group Metals in the γ’ (Ll2) Phase of a γ-γ’ Complex Nickel Base Superalloy Using Alchemi (Atomic Location by Channnelling Enhanced Microanalysis)
Ofori AP, Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 7 (S2), 346-347.
01-08-2001 - Electron Energy Loss Spectroscopy (EELS) of GaN Alloys and Quantum Wells
Keast VJ, Sharma N, Kappers M, Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 7 (S2), 1182-1183.
01-08-2001 - Effects of electron-beam exposure on a ruthenium nanocluster polymer
Thomas MDR, Ahmed H, Sanderson KM, Shephard DS, Johnson BFG, Ozkaya D, Sharma N, Humphreys C
Journal of Applied Physics, Aip Publishing vol. 90 (2), 947-952.
15-07-2001 - Local symmetry and bonding effects on electron energy-loss near-edge structures:Ab initiostudy of an NiAl grain boundary
Pankhurst DA, Botton GA, Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 63 (20)
08-05-2001 - Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ
Materials Science and Engineering: B, Elsevier Bv vol. 81 (1-3), 19-22.
01-04-2001 - Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
Bright AN, Thomas PJ, Weyland M, Tricker DM, Humphreys CJ, Davies R
Journal of Applied Physics, Aip Publishing vol. 89 (6), 3143-3150.
15-03-2001 - A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
Bright AN, Tricker DM, Humphreys CJ, Davies R
Journal of Electronic Materials, Springer Science and Business Media Llc vol. 30 (3), L13-L16.
01-03-2001 - Chemical mapping of indium rich quantum dots in InGaN/GaN quantum wells
Sharma N, Cho HK, Lee JY, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 667
01-01-2001 - Microstructure of semiconducting MnSi1.7 and β-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy
Tatsuoka H, koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD, Humphreys CJ
Thin Solid Films, Elsevier Bv vol. 381 (2), 231-235.
01-01-2001
2000
- Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists
Saifullah MSM, Kurihara K, Humphreys CJ
Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society vol. 18 (6), 2737-2744.
01-11-2000 - Microstructural evolution and stability of (Fe1−xVx)3Al alloys in relation to the electronic structure
Botton GA, Nishino Y, Humphreys CJ
Intermetallics, Elsevier Bv vol. 8 (9-11), 1209-1214.
01-09-2000 - Chemical mapping and formation of V-defects in InGaN multiple quantum wells
Sharma N, Thomas P, Tricker D, Humphreys C
Applied Physics Letters, Aip Publishing vol. 77 (9), 1274-1276.
28-08-2000 - The effect of annealing on the microstructure and tensile properties of a β/γ′ Ni–Al–Fe alloy
Pekarskaya E, Botton GA, Jones CN, Humphreys CJ
Intermetallics, Elsevier Bv vol. 8 (8), 903-913.
01-08-2000 - The Effect of Local Symmetry on Atomic Resolution EELS Near-Edge Structures: Predictions for Grain Boundaries In NiAl
Pankhurst DA, Botton GA, Humphreys CJ
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 6 (S2), 186-187.
01-08-2000 - Facing up to the future of materials science and technology
Humphreys C
Materials World vol. 8 (4), 11-13.
01-01-2000 - Oxbridge and the public schools
Humphreys C
Materials World vol. 8 (1), 2-3.
01-01-2000 - THE NUMBERS IN THE EXODUS FROM EGYPT: A FURTHER APPRAISAL
Humphreys C
Vetus Testamentum, Walter De Gruyter Gmbh vol. 50 (3), 323-328.
01-01-2000
1999
- Electron energy loss spectroscopy studies of the amorphous to crystalline transition in FeF3
Saifullah MSM, Botton GA, Boothroyd CB, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 86 (5), 2499-2504.
01-09-1999 - Electrons seen in orbit
Humphreys CJ
Nature, Springer Science and Business Media Llc vol. 401 (6748), 21-22.
01-09-1999 - A transmission electron microscopy investigation of SiC films grown on SiC substrates by solid-source molecular beam epitaxy
Kaiser U, Khodos I, Brown PD, Chuvilin A, Albrecht M, Humphreys CJ, Fissel A, Richter W
Journal of Materials Research, Springer Science and Business Media Llc vol. 14 (8), 3226-3236.
01-08-1999 - Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
Weyher JL, Brown PD, Zauner ARA, Müller S, Boothroyd CB, Foord DT, Hageman PR, Humphreys CJ et al.
Journal of Crystal Growth, Elsevier Bv vol. 204 (4), 419-428.
01-08-1999 - The effect of growth condition on the structure of 2H – AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy
Kaiser U, Brown PD, Khodos I, Humphreys CJ, Schenk HPD, Richter W
Journal of Materials Research, Springer Science and Business Media Llc vol. 14 (5), 2036-2042.
01-05-1999 - Energy‐filtered transmission electron microscopy of multilayers in semiconductors
LIU, BOOTHROYD, HUMPHREYS
Journal of Microscopy, Wiley vol. 194 (1), 58-70.
01-04-1999 - Quantitative analysis of ultrathin doping layers in semiconductors using high‐angle annular dark field images
LIU, PRESTON, BOOTHROYD, HUMPHREYS
Journal of Microscopy, Wiley vol. 194 (1), 171-182.
01-04-1999 - A two-phase charge-density real-space-pairing model of high-Tc\n superconductivity
Humphreys CJ
Acta Crystallographica Section a Foundations of Crystallography, International Union of Crystallography (Iucr) vol. 55 (2), 228-233.
01-03-1999 - A two-phase charge-density real-space-pairing model of high-Tc superconductivity
Humphreys CJ
Acta Crystallographica Section a Foundations of Crystallography vol. 55 (2 PART I), 228-233.
01-03-1999 - A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy
Walther T, Humphreys CJ
Journal of Crystal Growth, Elsevier Bv vol. 197 (1-2), 113-128.
01-02-1999 - Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon
Smith JP, Eccleston W, Brown PD, Humphreys CJ
Journal of The Electrochemical Society, The Electrochemical Society vol. 146 (1), 306-312.
01-01-1999 - Structure and Climb of Faulted Dipoles in GaAs
Yonenaga I, Lim S-H, Shindo D, Brown PD, Humphreys CJ
Physica Status Solidi (a), Wiley vol. 171 (1), 53-57.
01-01-1999 - Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials
Chen GS, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 85 (1), 148-152.
01-01-1999
1998
- Atomic Arrangement of a Z-Shape Faulted Dipole within Deformed GaAs
Lim S-H, Shindo D, Yonenaga I, Brown PD, Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 81 (24), 5350-5353.
14-12-1998 - High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al.
Japanese Journal of Applied Physics, IOP Publishing vol. 37 (12R), 6556-6556.
01-12-1998 - Microwave dielectric properties of (Y2-xRx)BaCuO5 (R = rare-earth) solid solutions
Ogawa H, Watanabe M, Ohsato H, Humphreys C
IEEE International Symposium On Applications of Ferroelectrics, 517-520.
01-12-1998 - Stuff of dreams
Humphreys C
New Scientist vol. 157 (2126), 44-45.
01-12-1998 - Climb of dislocations in GaAs by irradiation
Yonenaga I, Brown PD, Humphreys CJ
Materials Science and Engineering: A, Elsevier Bv vol. 253 (1-2), 148-150.
01-09-1998 - Effect of molybdenum substitution on phase stability and high-temperature strength of Fe3 Al alloys
Nishino Y, Inkson BJ, Ogawa T, Humphreys CJ
Philosophical Magazine Letters, Informa Uk Limited vol. 78 (2), 97-103.
01-08-1998 - Electron-beam-induced damage in amorphous SiO2and the direct fabrication of silicon nanostructures
Chen GS, Boothroyd CB, Humphreys CJ
Philosophical Magazine A, Informa Uk Limited vol. 78 (2), 491-506.
01-08-1998 - Interfacial reaction and defect microstructure of epitaxial MnSb/Si(111) grown by hot-wall epitaxy
Tatsuoka H, Isaji K, Sugiura K, Kuwabara H, Brown PD, Xin Y, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 83 (10), 5504-5508.
15-05-1998 - Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
Dudarev SL, Botton GA, Savrasov SY, Humphreys CJ, Sutton AP
Physical Review B, American Physical Society (Aps) vol. 57 (3), 1505-1509.
15-01-1998 - Comparative Study of the Microstructure and Tensile Properties of Ni-Al Alloys with Fe and Cr Additions
Pekarskaya E, Humphreys CJ, Jones CN
Mrs Proceedings, Springer Science and Business Media Llc vol. 552
01-01-1998 - Electronic Structure, Charge Transfer and Bonding in Intermetallics Using EELS and Density Functional Theory
Humphreys CJ, Botton GA, Pankhurst DA, Keast VJ, Temmerman WM
Mrs Proceedings, Springer Science and Business Media Llc vol. 552
01-01-1998 - High-quality epitaxial MnSi(111) layers grown in the presence of an Sb flux
Matsuda K, Tatsuoka H, Matsunaga K, Isaji K, Kuwabara H, Brown PD, Xin Y, Dunin-Borkowski R et al.
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers vol. 37 (12A), 6556-6561.
01-01-1998 - Microwave dielectric properties of Y2Ba(Cu1-xZnx)O5 solid solutions
Watanabe M, Ogawa H, Ohsato H, Humphreys C
Japanese Journal of Applied Physics Part 1 Regular Papers and Short Notes and Review Papers vol. 37 (9 PART B), 5360-5363.
01-01-1998 - Shaping the future of materials science
Humphreys C
Materials World vol. 6 (6), 352-355.
01-01-1998