Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 1 of 10
2022
- Humphreys C (2022). From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 28 (S1), 2736-2737.
01-08-2022 - Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ (2022). Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene. Physical Review B, American Physical Society vol. 105 (16)
13-04-2022 - Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2022). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022). Advanced Optical Materials vol. 10 (3), 2270012-2270012.
05-02-2022 - Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ (2022). Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials. Physical Review B, American Physical Society vol. 105 (2)
05-01-2022
2021
- Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP (2021). Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes. Advanced Optical Materials, Wiley, 2101675-2101675.
20-12-2021 - Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ (2021). X-ray characterisation of the basal stacking fault densities of (112̄2) GaN. Crystengcomm, Royal Society of Chemistry vol. 23 (35), 6059-6069.
03-08-2021 - Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ (2021). Mechanical Properties of Graphene. Applied Physics Reviews, Aip Publishing
19-04-2021 - Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ (2021). Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]. Physical Review B vol. 103 (11), 119901-119901.
01-03-2021
2020
- Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ (2020). Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites. Scientific Reports, Nature Publishing Group vol. 10
24-09-2020 - Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L (2020). Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films. Acs Nano, American Chemical Society
27-08-2020 - S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN (2020). Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3)
09-04-2020 - Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C (2020). Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers. Physical Review B: Condensed Matter and Materials Physics, American Physical Society vol. 101
20-03-2020
2019
- Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2019). A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 217 (7)
29-12-2019 - Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S (2019). InGaN as a substrate for AC photoelectrochemical imaging. Sensors, Mdpi
11-10-2019 - Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C (2019). Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals. Acs Applied Energy Materials, American Chemical Society (Acs) vol. 2 (10), 6998-7004.
07-10-2019 - Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C (2019). 3D strain in 2D materials: to what extent is monolayer graphene graphite? Physical Review Letters, American Physical Society vol. 123, 135501-135501.
25-09-2019 - Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA (2019). Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates. Journal of Applied Physics, Aip Publishing vol. 125 (22)
11-06-2019 - Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics, Aip Publishing vol. 125 (16)
23-04-2019 - Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P (2019). Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength. Japanese Journal of Applied Physics vol. 58
23-04-2019 - Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ (2019). Effect of humidity on the interlayer interaction of bilayer graphene. Physical Review B vol. 99 (4)
02-01-2019
2018
- Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2018). Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 66 (1), 613-618.
07-12-2018 - Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ (2018). What is red? On the chromaticity of orange-red InGaN/GaN based LEDs. Journal of Applied Physics, Aip Publishing vol. 124 (18)
09-11-2018 - Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ (2018). Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells. Acs Photonics, American Chemical Society (Acs) vol. 5 (11), 4437-4446.
17-10-2018 - Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P (2018). Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, American Physical Society (Aps) vol. 98 (15)
01-10-2018 - Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P (2018). Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials, Mdpi vol. 11 (9)
15-09-2018 - Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ (2018). Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics, Aip Publishing vol. 124 (10)
11-09-2018 - Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ (2018). Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics, Aip Publishing vol. 124 (5)
03-08-2018 - Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA (2018). Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 24 (S1), 4-5.
01-08-2018 - Humphreys C and Waddington G (2018). Response to letter from Wayne Osborn. Astronomy and Geophysics vol. 59 (4)
01-08-2018 - Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG (2018). Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, Institution of Engineering and Technology (Iet) vol. 54 (15), 947-949.
01-07-2018 - Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA (2018). Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics, Aip Publishing vol. 123 (18)
14-05-2018 - Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P (2018). Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics, Aip Publishing vol. 123 (18)
10-05-2018 - Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P (2018). Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics Condensed Matter, Iop Publishing vol. 30 (17)
09-04-2018 - Humphreys C and Waddington G (2018). Illuminating theory on early solar eclipse. Astronomy and Geophysics vol. 59 (1)
01-02-2018 - Nixon D, Humphreys C and Waddington G (2018). Moon village: show us the money. Astronomy & Geophysics, Oxford University Press (Oup) vol. 59 (1), 1.8-1.8.
01-02-2018 - Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ (2018). Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, Aip Publishing vol. 123 (2)
09-01-2018
2017
- Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ (2017). The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics, Aip Publishing vol. 122 (23)
21-12-2017 - Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN (2017). Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 64 (12), 4868-4874.
11-10-2017 - Humphreys C and Waddington G (2017). Solar eclipse of 1207 BC helps to date pharaohs. Astronomy & Geophysics, Oxford University Press (Oup) vol. 58 (5), 5.39-5.42.
01-10-2017 - Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA (2017). Machine Learning Predicts Laboratory Earthquakes. Geophysical Research Letters vol. 44 (18), 9276-9282.
28-09-2017 - Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ (2017). X-ray diffraction analysis of cubic zincblende III-nitrides. Journal of Physics D, Iop Publishing vol. 50 (43)
26-09-2017 - Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ (2017). Automatized convergence of optoelectronic simulations using active machine learning. Applied Physics Letters, Aip Publishing vol. 111 (4)
24-07-2017 - Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA (2017). Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. Nano Letters, American Chemical Society (Acs) vol. 17 (8), 4846-4852.
18-07-2017 - Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA (2017). Structural impact on the nanoscale optical properties of InGaN core-shell nanorods. Applied Physics Letters, Aip Publishing vol. 110 (17)
24-04-2017 - Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA (2017). All-GaN-Integrated Cascode Heterojunction Field Effect Transistors. Ieee Transactions On Power Electronics, Institute of Electrical and Electronics Engineers (Ieee) vol. 32 (11), 8743-8750.
17-02-2017 - Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA (2017). The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Ultramicroscopy, Elsevier vol. 176, 93-98.
03-02-2017 - Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2017). Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, Elsevier vol. 459, 185-188.
01-02-2017 - Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW (2017). Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001). Journal of Applied Physics, Aip Publishing vol. 121 (4)
24-01-2017 - Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA (2017). Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure. Crystal Growth & Design, American Chemical Society (Acs) vol. 17 (2), 474-482.
11-01-2017 - Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA (2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, Aip Publishing vol. 121 (1)
03-01-2017