Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 2 of 10
2016
- Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2016). Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence. Applied Physics Letters, Aip Publishing vol. 109 (23)
05-12-2016 - Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM (2016). Dielectric response of wurtzite gallium nitride in the terahertz frequency range. Solid State Communications, Elsevier vol. 247, 68-71.
01-12-2016 - Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT (2016). Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source. Journal of Crystal Growth, Elsevier vol. 456, 151-154.
01-12-2016 - Schulz S, Tanner DSP, O'Reilly EP, Caro MA, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2016). Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Applied Physics Letters, Aip Publishing vol. 109 (22)
28-11-2016 - Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA (2016). A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates. Sci Technol Adv Mater vol. 17 (1), 736-743.
10-11-2016 - Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA (2016). Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold. Journal of Applied Physics, Aip Publishing vol. 120 (16)
28-10-2016 - Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K (2016). Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence. Journal of Applied Physics, Aip Publishing vol. 120 (8)
23-08-2016 - Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS (2016). High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer. Scientific Reports, Springer Nature vol. 6 (1)
14-07-2016 - Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M (2016). Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0). Semiconductor Science and Technology, Iop Publishing vol. 31 (8)
12-07-2016 - Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B (2016). Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes. Aip Advances, Aip Publishing vol. 6 (7)
01-07-2016 - Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2016). Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, Aip Publishing vol. 108 (25)
20-06-2016 - Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T (2016). Scalable semipolar gallium nitride templates for high-speed LEDs. Spie Newsroom, Spie, The International Society For Optics and Photonics
03-06-2016 - Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM (2016). Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique. Applied Physics Letters, Aip Publishing vol. 108 (21)
23-05-2016 - Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ (2016). The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics vol. 119 (18)
14-05-2016 - Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA (2016). Characterization of p-GaN1−x As x /n-GaN PN junction diodes. Semiconductor Science and Technology, Iop Publishing vol. 31 (6)
12-05-2016 - Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA (2016). The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells. Journal of Applied Physics, Aip Publishing vol. 119 (17)
02-05-2016 - Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2016). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016). Physica Status Solidi (B), Wiley vol. 253 (5), 1024-1024.
01-05-2016 - Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ (2016). Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning. Scientific Reports, Springer Nature vol. 6 (1)
26-04-2016 - Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ (2016). Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures. Physica Status Solidi (C)
14-04-2016 - Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F (2016). Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates. Journal of Crystal Growth, Elsevier vol. 440, 69-75.
01-04-2016 - Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M (2016). Subthreshold Mobility in AlGaN/GaN HEMTs. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 63 (5), 1861-1865.
30-03-2016 - Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA (2016). Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods. Crystal Growth & Design, American Chemical Society (Acs) vol. 16 (4), 1907-1916.
23-03-2016 - Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA (2016). Dislocation core structures in (0001) InGaN. Journal of Applied Physics, Aip Publishing vol. 119 (10)
09-03-2016 - Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ (2016). Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, Aip Publishing vol. 108 (7)
15-02-2016 - Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2016). A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, Aip Publishing vol. 119 (5)
05-02-2016 - Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ (2016). n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon. Journal of Materials Chemistry C, Royal Society of Chemistry (Rsc) vol. 4 (35), 8291-8296.
01-01-2016 - Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ (2016). Origins of hillock defects on GaN templates grown on Si(111). Journal of Crystal Growth, Elsevier vol. 434, 123-127.
01-01-2016
2015
- Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Dislocation core structures in Si-doped GaN. Applied Physics Letters, Aip Publishing vol. 107 (24)
14-12-2015 - Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C (2015). Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire. Physica Status Solidi (B), Wiley vol. 253 (5), 834-839.
12-12-2015 - Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA (2015). Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN. Physical Review B, American Physical Society (Aps) vol. 92 (24)
01-12-2015 - Schulz S, Tanner DP, O'Reilly EP, Caro MA, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P (2015). Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. Physical Review B, American Physical Society (Aps) vol. 92 (23)
01-12-2015 - Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA (2015). Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping. Nano Letters, American Chemical Society (Acs) vol. 15 (11), 7639-7643.
22-10-2015 - Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E (2015). Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes. Aip Advances, Aip Publishing vol. 5 (10)
01-10-2015 - Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ (2015). Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions. Applied Physics Letters, Aip Publishing vol. 107 (13)
28-09-2015 - Pristovsek M, Frentrup M, Han Y and Humphreys CJ (2015). Optimizing GaN () hetero‐epitaxial templates grown on () sapphire. Physica Status Solidi (B), Wiley vol. 253 (1), 61-66.
31-08-2015 - Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2015). Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant. Semiconductor Science and Technology, Iop Publishing vol. 30 (10)
18-08-2015 - Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F (2015). Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers. Physica Status Solidi (B), Wiley vol. 253 (1), 46-53.
14-08-2015 - Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M (2015). Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 62 (8), 2464-2469.
07-07-2015 - Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD (2015). Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing. Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338.
02-04-2015 - Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C (2015). Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire. Journal of Crystal Growth, Elsevier vol. 415, 170-175.
01-04-2015 - Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW (2015). Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, Aip Publishing vol. 117 (11)
21-03-2015 - Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA (2015). Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V. Applied Physics Express, Iop Publishing vol. 8 (3)
19-02-2015 - Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA (2015). Segregation of In to Dislocations in InGaN. Nano Letters, American Chemical Society (Acs) vol. 15 (2), 923-930.
21-01-2015
2014
- Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2014). Carrier distributions in InGaN/GaN light‐emitting diodes. Physica Status Solidi (B), Wiley vol. 252 (5), 890-894.
29-12-2014 - Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA (2014). Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, Aip Publishing vol. 116 (24)
22-12-2014 - Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures. Physica Status Solidi (B), Wiley vol. 252 (5), 928-935.
19-12-2014 - Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA (2014). Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE. Journal of Crystal Growth, Elsevier vol. 408, 32-41.
01-12-2014 - Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA (2014). Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method. Apl Materials, Aip Publishing vol. 2 (12)
01-12-2014 - Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ (2014). A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures. Physica Status Solidi (B), Wiley vol. 252 (5), 866-872.
14-11-2014 - Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ (2014). Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy. Journal of Applied Physics, Aip Publishing vol. 116 (15)
16-10-2014