Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 2 of 10
2017
- Carrier localization in the vicinity of dislocations in InGaN
Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ et al.
Journal of Applied Physics, Aip Publishing vol. 121 (1)
03-01-2017
2016
- Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ et al.
Applied Physics Letters, Aip Publishing vol. 109 (23)
05-12-2016 - Dielectric response of wurtzite gallium nitride in the terahertz frequency range
Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ et al.
Solid State Communications, Elsevier vol. 247, 68-71.
01-12-2016 - Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ, Foxon CT
Journal of Crystal Growth, Elsevier vol. 456, 151-154.
01-12-2016 - Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 109 (22)
28-11-2016 - A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ et al.
Sci Technol Adv Mater vol. 17 (1), 736-743.
10-11-2016 - Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D et al.
Journal of Applied Physics, Aip Publishing vol. 120 (16)
28-10-2016 - Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 120 (8)
23-08-2016 - High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer
Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ et al.
Scientific Reports, Springer Nature vol. 6 (1)
14-07-2016 - Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D et al.
Semiconductor Science and Technology, IOP Publishing vol. 31 (8)
12-07-2016 - Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes
Presa S, Maaskant PP, Kappers MJ, Humphreys CJ, Corbett B
Aip Advances, Aip Publishing vol. 6 (7)
01-07-2016 - Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ, Oliver RA
Applied Physics Letters, Aip Publishing vol. 108 (25)
20-06-2016 - Scalable semipolar gallium nitride templates for high-speed LEDs
Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F, Meyer T
Spie Newsroom, Spie, The International Society For Optics and Photonics
03-06-2016 - Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique
Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ et al.
Applied Physics Letters, Aip Publishing vol. 108 (21)
23-05-2016 - The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
Dawson P, Schulz S, Oliver RA, Kappers MJ, Humphreys CJ
Journal of Applied Physics vol. 119 (18)
14-05-2016 - Characterization of p-GaN1−x As x /n-GaN PN junction diodes
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S et al.
Semiconductor Science and Technology, IOP Publishing vol. 31 (6)
12-05-2016 - The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells
Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C et al.
Journal of Applied Physics, Aip Publishing vol. 119 (17)
02-05-2016 - Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016)
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 1024-1024.
01-05-2016 - Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
Rouet-Leduc B, Barros K, Lookman T, Humphreys CJ
Scientific Reports, Springer Nature vol. 6 (1)
26-04-2016 - Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA, Humphreys CJ
Physica Status Solidi (C)
14-04-2016 - Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates.
Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F et al.
Journal of Crystal Growth, Elsevier vol. 440, 69-75.
01-04-2016 - Subthreshold Mobility in AlGaN/GaN HEMTs
Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S et al.
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 63 (5), 1861-1865.
30-03-2016 - Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW et al.
Crystal Growth & Design, American Chemical Society (Acs) vol. 16 (4), 1907-1916.
23-03-2016 - Dislocation core structures in (0001) InGaN
Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 119 (10)
09-03-2016 - Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D et al.
Applied Physics Letters, Aip Publishing vol. 108 (7)
15-02-2016 - A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 119 (5)
05-02-2016 - n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon
Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E, Humphreys CJ
Journal of Materials Chemistry C, Royal Society of Chemistry (Rsc) vol. 4 (35), 8291-8296.
01-01-2016 - Origins of hillock defects on GaN templates grown on Si(111)
Han Y, Zhu D, Zhu T, Humphreys CJ, Wallis DJ
Journal of Crystal Growth, Elsevier vol. 434, 123-127.
01-01-2016
2015
- Dislocation core structures in Si-doped GaN
Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO et al.
Applied Physics Letters, Aip Publishing vol. 107 (24)
14-12-2015 - Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F, Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 834-839.
12-12-2015 - Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN
Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ, Oliver RA
Physical Review B, American Physical Society (Aps) vol. 92 (24)
01-12-2015 - Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Schulz S, Tanner DP, O'Reilly EP, A. M, Martin TL, Bagot PAJ, Moody MP, Tang F et al.
Physical Review B, American Physical Society (Aps) vol. 92 (23)
01-12-2015 - Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A et al.
Nano Letters, American Chemical Society (Acs) vol. 15 (11), 7639-7643.
22-10-2015 - Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes
Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F et al.
Aip Advances, Aip Publishing vol. 5 (10)
01-10-2015 - Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 107 (13)
28-09-2015 - Optimizing GaN () hetero‐epitaxial templates grown on () sapphire
Pristovsek M, Frentrup M, Han Y, Humphreys CJ
Physica Status Solidi (B), Wiley vol. 253 (1), 61-66.
31-08-2015 - Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ, Houston PA
Semiconductor Science and Technology, IOP Publishing vol. 30 (10)
18-08-2015 - Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers
Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K, Scholz F
Physica Status Solidi (B), Wiley vol. 253 (1), 46-53.
14-08-2015 - Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs
Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ et al.
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 62 (8), 2464-2469.
07-07-2015 - Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing
Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E et al.
Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338.
02-04-2015 - Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire
Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M, Humphreys C
Journal of Crystal Growth, Elsevier vol. 415, 170-175.
01-04-2015 - Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 117 (11)
21-03-2015 - Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V
Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M et al.
Applied Physics Express, IOP Publishing vol. 8 (3)
19-02-2015 - Segregation of In to Dislocations in InGaN
Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO et al.
Nano Letters, American Chemical Society (Acs) vol. 15 (2), 923-930.
21-01-2015
2014
- Carrier distributions in InGaN/GaN light‐emitting diodes
Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ, Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 890-894.
29-12-2014 - Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ, Houston PA
Journal of Applied Physics, Aip Publishing vol. 116 (24)
22-12-2014 - Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P, Oliver RA
Physica Status Solidi (B), Wiley vol. 252 (5), 928-935.
19-12-2014 - Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE
Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P et al.
Journal of Crystal Growth, Elsevier vol. 408, 32-41.
01-12-2014 - Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ et al.
Apl Materials, Aip Publishing vol. 2 (12)
01-12-2014 - A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures
Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ, Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 866-872.
14-11-2014