Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 3 of 10
2014
- Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy
Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ
Journal of Applied Physics, Aip Publishing vol. 116 (15)
16-10-2014 - Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride
Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD
Physical Review Letters, American Physical Society (Aps) vol. 113 (13)
24-09-2014 - The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA
Applied Physics Letters, Aip Publishing vol. 105 (11)
15-09-2014 - Structure and strain relaxation effects of defects in InxGa1−xN epilayers
Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S
Journal of Applied Physics, Aip Publishing vol. 116 (10)
10-09-2014 - The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 105 (9)
01-09-2014 - How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems
Humphreys C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S3), xcvii-c.
01-08-2014 - How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems
Humphreys C and Ford BJ
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S2), 11-14.
29-07-2014 - Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW
Journal of Applied Physics, Aip Publishing vol. 116 (3)
18-07-2014 - Investigation of the GaN-on-GaAs interface for vertical power device applications
Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M
Journal of Applied Physics, Aip Publishing vol. 116 (1)
03-07-2014 - Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C
Aip Advances, Aip Publishing vol. 4 (6)
01-06-2014 - Dislocation-related trap levels in nitride-based light emitting diodes
Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C
Applied Physics Letters, Aip Publishing vol. 104 (21)
26-05-2014 - Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 115 (11)
21-03-2014 - Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 115 (11)
18-03-2014 - Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW
Journal of Physics D, Iop Publishing vol. 47 (13)
11-03-2014 - The impact of growth parameters on trench defects in InGaN/GaN quantum wells
Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 211 (4), 740-743.
14-02-2014 - The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ
Physica Status Solidi (C), Wiley vol. 11 (3‐4), 750-753.
28-01-2014 - Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD
Journal of Applied Physics, Aip Publishing vol. 115 (3)
21-01-2014 - The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA
Journal of Crystal Growth, Elsevier vol. 386, 88-93.
01-01-2014
2013
- Elastic constants and critical thicknesses of ScGaN and ScAlN
Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (24)
28-12-2013 - Interfacial Structure and Chemistry of GaN on Ge(111)
Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 111 (25)
16-12-2013 - Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD
Applied Physics Letters, Aip Publishing vol. 103 (25)
16-12-2013 - Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN
Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (1), 55-60.
12-11-2013 - Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Crystal Growth, Elsevier vol. 383, 12-18.
01-11-2013 - Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (13)
04-10-2013 - Prospects of III-nitride optoelectronics grown on Si
Zhu D, Wallis DJ and Humphreys CJ
Reports On Progress in Physics, Iop Publishing vol. 76 (10)
01-10-2013 - The effect of dislocations on the efficiency of InGaN/GaN solar cells
Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ
Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284.
01-10-2013 - The dissociation of the [a + c] dislocation in GaN
Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938.
30-09-2013 - The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 103 (14)
30-09-2013 - Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps
Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ
Semiconductor Science and Technology, Iop Publishing vol. 28 (9)
21-08-2013 - Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds
Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
22-07-2013 - Mg Doping Affects Dislocation Core Structures in GaN
Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA
Physical Review Letters, American Physical Society (Aps) vol. 111 (2)
09-07-2013 - Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates
Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW
Semiconductor Science and Technology, Iop Publishing vol. 28 (6)
16-05-2013 - Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 113 (7)
15-02-2013 - The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 113 (6)
11-02-2013 - High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance
Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B
Applied Physics Express, Iop Publishing vol. 6 (2)
01-02-2013 - High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 102 (2)
14-01-2013
2012
- The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law
Humphreys CJ
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 69 (1), 45-50.
05-12-2012 - Properties of trench defects in InGaN/GaN quantum well structures
Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 210 (1), 195-198.
21-11-2012 - Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 101 (21)
19-11-2012 - Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 112 (1)
01-07-2012 - The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 111 (8)
15-04-2012 - Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs
Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 59 (5), 1416-1422.
08-03-2012 - Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 111 (5)
01-03-2012 - Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire
Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 494-497.
16-02-2012 - Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering
Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 111 (4)
15-02-2012 - Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope
Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T
Physica Status Solidi (C), Wiley vol. 9 (3‐4), 1079-1082.
14-02-2012 - Structure and chemistry of the Si(111)/AlN interface
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 100 (1)
02-01-2012