Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 3 of 10
2014
- Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD (2014). Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride. Physical Review Letters, American Physical Society (Aps) vol. 113 (13)
24-09-2014 - Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Applied Physics Letters, Aip Publishing vol. 105 (11)
15-09-2014 - Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S (2014). Structure and strain relaxation effects of defects in InxGa1−xN epilayers. Journal of Applied Physics, Aip Publishing vol. 116 (10)
10-09-2014 - Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ (2014). The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures. Applied Physics Letters, Aip Publishing vol. 105 (9)
01-09-2014 - Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S3), xcvii-c.
01-08-2014 - Humphreys C (2014). How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S2), 11-14.
29-07-2014 - Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW (2014). Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, Aip Publishing vol. 116 (3)
18-07-2014 - Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M (2014). Investigation of the GaN-on-GaAs interface for vertical power device applications. Journal of Applied Physics, Aip Publishing vol. 116 (1)
03-07-2014 - Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C (2014). Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues. Aip Advances, Aip Publishing vol. 4 (6)
01-06-2014 - Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Applied Physics Letters, Aip Publishing vol. 104 (21)
26-05-2014 - Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2014). Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics, Aip Publishing vol. 115 (11)
21-03-2014 - Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ (2014). Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, Aip Publishing vol. 115 (11)
18-03-2014 - Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW (2014). Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D, Iop Publishing vol. 47 (13)
11-03-2014 - Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA (2014). The impact of growth parameters on trench defects in InGaN/GaN quantum wells. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 211 (4), 740-743.
14-02-2014 - Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ (2014). The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells. Physica Status Solidi (C), Wiley vol. 11 (3‐4), 750-753.
28-01-2014 - Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD (2014). Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. Journal of Applied Physics, Aip Publishing vol. 115 (3)
21-01-2014 - Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA (2014). The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method. Journal of Crystal Growth, Elsevier vol. 386, 88-93.
01-01-2014
2013
- Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA (2013). Elastic constants and critical thicknesses of ScGaN and ScAlN. Journal of Applied Physics, Aip Publishing vol. 114 (24)
28-12-2013 - Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ (2013). Interfacial Structure and Chemistry of GaN on Ge(111). Physical Review Letters, American Physical Society (Aps) vol. 111 (25)
16-12-2013 - Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD (2013). Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates. Applied Physics Letters, Aip Publishing vol. 103 (25)
16-12-2013 - Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C (2013). Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN. Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (1), 55-60.
12-11-2013 - Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA (2013). Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges. Journal of Crystal Growth, Elsevier vol. 383, 12-18.
01-11-2013 - Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA (2013). Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides. Journal of Applied Physics, Aip Publishing vol. 114 (13)
04-10-2013 - Zhu D, Wallis DJ and Humphreys CJ (2013). Prospects of III-nitride optoelectronics grown on Si. Reports On Progress in Physics, Iop Publishing vol. 76 (10)
01-10-2013 - Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ (2013). The effect of dislocations on the efficiency of InGaN/GaN solar cells. Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284.
01-10-2013 - Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD (2013). The dissociation of the [a + c] dislocation in GaN. The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938.
30-09-2013 - Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ (2013). The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, Aip Publishing vol. 103 (14)
30-09-2013 - Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ (2013). Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps. Semiconductor Science and Technology, Iop Publishing vol. 28 (9)
21-08-2013 - Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA (2013). Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds. Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
22-07-2013 - Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA (2013). Mg Doping Affects Dislocation Core Structures in GaN. Physical Review Letters, American Physical Society (Aps) vol. 111 (2)
09-07-2013 - Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2013). Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures. Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E (2013). Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells. Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ (2013). Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells. Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S)
31-05-2013 - Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW (2013). Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates. Semiconductor Science and Technology, Iop Publishing vol. 28 (6)
16-05-2013 - Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA (2013). Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells. Journal of Applied Physics, Aip Publishing vol. 113 (7)
15-02-2013 - Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA (2013). The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption. Journal of Applied Physics, Aip Publishing vol. 113 (6)
11-02-2013 - Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B (2013). High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance. Applied Physics Express, Iop Publishing vol. 6 (2)
01-02-2013 - Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ (2013). High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters, Aip Publishing vol. 102 (2)
14-01-2013
2012
- Humphreys CJ (2012). The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law. Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 69 (1), 45-50.
05-12-2012 - Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA (2012). Properties of trench defects in InGaN/GaN quantum well structures. Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 210 (1), 195-198.
21-11-2012 - Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA (2012). Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures. Applied Physics Letters, Aip Publishing vol. 101 (21)
19-11-2012 - Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ (2012). Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics, Aip Publishing vol. 112 (1)
01-07-2012 - Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ (2012). The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Journal of Applied Physics, Aip Publishing vol. 111 (8)
15-04-2012 - Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E (2012). Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs. Ieee Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 59 (5), 1416-1422.
08-03-2012 - Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA (2012). Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy. Journal of Applied Physics, Aip Publishing vol. 111 (5)
01-03-2012 - Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ (2012). Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire. Physica Status Solidi (B), Wiley vol. 249 (3), 494-497.
16-02-2012 - Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ (2012). Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering. Journal of Applied Physics, Aip Publishing vol. 111 (4)
15-02-2012 - Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T (2012). Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope. Physica Status Solidi (C), Wiley vol. 9 (3‐4), 1079-1082.
14-02-2012 - Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ (2012). Structure and chemistry of the Si(111)/AlN interface. Applied Physics Letters, Aip Publishing vol. 100 (1)
02-01-2012 - Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, Elsevier vol. 520 (7), 3064-3070.
01-01-2012