Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 4 of 10
2012
- Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ
Thin Solid Films, Elsevier vol. 520 (7), 3064-3070.
01-01-2012
2011
- Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN
Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 498-502.
27-12-2011 - Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
Hao R, Kappers MJ, Moram MA and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86.
01-12-2011 - Growth, microstructure and morphology of epitaxial ScGaN films
Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 33-40.
24-11-2011 - High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates
Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 13-16.
21-11-2011 - Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 110 (9)
01-11-2011 - Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate
Zhang Y, Fu W-Y, Humphreys C and Lieten R
Applied Physics Express, IOP Publishing vol. 4 (9)
26-08-2011 - The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ
Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R)
01-08-2011 - The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ
Japanese Journal of Applied Physics, IOP Publishing vol. 50 (8R)
01-08-2011 - Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA
Applied Physics Letters, Aip Publishing vol. 99 (2)
11-07-2011 - Dislocation Climb in c-Plane AlN Films
Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA
Applied Physics Express, IOP Publishing vol. 4 (6)
01-06-2011 - The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 208 (7), 1529-1531.
01-06-2011 - Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys
Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (16)
15-04-2011 - The effects of Si doping on dislocation movement and tensile stress in GaN films
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 109 (7)
01-04-2011 - Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (11)
15-03-2011 - A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations
Chee AKW, Broom RF, Humphreys CJ and Bosch EGT
Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011 - Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C
Journal of Applied Physics, Aip Publishing vol. 109 (1)
01-01-2011
2010
- Dislocation movement in GaN films
Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (26)
27-12-2010 - Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (25)
20-12-2010 - Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm
Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 108 (12)
15-12-2010 - Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA
Ultramicroscopy, Elsevier vol. 111 (3), 207-211.
01-12-2010 - The effects of annealing on non-polar (112¯0) a-plane GaN films
Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA
Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543.
01-11-2010 - Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP
Physical Review B, American Physical Society (Aps) vol. 82 (12)
15-09-2010 - Microstructural origins of localization in InGaN quantum wells
Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ
Journal of Physics D, IOP Publishing vol. 43 (35)
19-08-2010 - A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem
Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 57 (10), 2455-2461.
09-08-2010 - Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 108 (3)
01-08-2010 - Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices
Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 16 (S2), 1890-1891.
01-07-2010 - Imaging dislocations in gallium nitride across broad areas using atomic force microscopy
Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA
Review of Scientific Instruments, Aip Publishing vol. 81 (6)
01-06-2010 - Combined structure-factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN
Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 66 (4), 446-450.
07-05-2010 - Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR
Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600.
01-02-2010 - Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Physics D, IOP Publishing vol. 43 (5)
21-01-2010 - Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire
Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367.
01-01-2010
2009
- Cavity Enhancement of Single Quantum Dot Emission in the Blue
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ
Discover Nano, Springer Nature vol. 5 (3)
27-12-2009 - Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy
Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (11)
01-12-2009 - Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (10)
15-11-2009 - The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
Moram MA, Oliver RA, Kappers MJ and Humphreys CJ
Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944.
16-10-2009 - Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B
Applied Physics Letters, Aip Publishing vol. 95 (15)
12-10-2009 - On the origin of threading dislocations in GaN films
Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (7)
01-10-2009 - Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
Oliver RA, Sumner J, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (5)
01-09-2009 - Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191.
01-08-2009 - Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT
Journal of Applied Physics, Aip Publishing vol. 106 (1)
01-07-2009 - The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Physics D, IOP Publishing vol. 42 (13)
16-06-2009 - Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (12)
15-06-2009 - Lattice distortions in GaN on sapphire using the CBED–HOLZ technique
Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255.
12-06-2009 - Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299.
01-06-2009 - Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242.
01-06-2009 - Understanding x-ray diffraction of nonpolar gallium nitride films
Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (11)
01-06-2009 - Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot
Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A
Nanotechnology, IOP Publishing vol. 20 (24)
27-05-2009 - Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers
Johnston CF, Moram MA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (16)
20-04-2009 - Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method
Johnston CF, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (7)
01-04-2009