Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
Publications
- Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers
ACS Applied Electronic Materials (2024)
DOI: 10.1021/acsaelm.4c01208 - Wafer-scale transfer-free graphene as an ITO replacement for OLEDs
DOI: 10.1109/nmdc57951.2023.10343805 - From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene
Microscopy and Microanalysis (2022)
DOI: 10.1017/s1431927622010297 - Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene
Physical Review B
DOI: 10.1103/PhysRevB.105.165416 - Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)
Advanced Optical Materials
DOI: 10.1002/adom.202270012 - Electron beam damage in titanium dioxide films (2022)
DOI: 10.1201/9781003063056-43 - Electron microscopy and analysis: the future (2022)
DOI: 10.1201/9781003063056-6 - Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy (2022)
DOI: 10.1201/9781003063056-142 - Modelling of electron energy-loss spectroscopy detection limits (2022)
DOI: 10.1201/9781003063056-87 - Observation of the mixed dynamic form factor in the Ag M4,5-edge (2022)
DOI: 10.1201/9781003063056-44 - Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging (2022)
DOI: 10.1201/9781003063056-78 - Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
Physical Review B (2022)
DOI: 10.1103/physrevb.105.024103 - The relationship between epitaxial growth, defect microstructure and luminescence in GaN (2022)
DOI: 10.1201/9781003063056-111 - ‘Nano-machining’ using a focused ion beam (2022)
DOI: 10.1201/9781003063056-170 - Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes
Advanced Optical Materials (2021)
DOI: 10.1002/adom.202101675 - X-ray characterisation of the basal stacking fault densities of (112̄2) GaN
CrystEngComm
DOI: 10.1039/d1ce00627d - Mechanical Properties of Graphene
Applied Physics Reviews
DOI: 10.1063/5.0040578 - Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]
Physical Review B
DOI: 10.1103/physrevb.103.119901 - Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100) (2021)
DOI: 10.1201/9781003069621-27 - Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites
Scientific Reports (2020)
DOI: 10.1038/s41598-020-72372-1 - Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.
ACS Nano (2020)
DOI: 10.1021/acsnano.9b08553 - The interaction of electron beams with solids - Some new effects
Microscopy and Microanalysis (2020)
DOI: 10.1017/s0424820100177076 - Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2020)
DOI: 10.1116/1.5144509 - Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
Physical Review B: Condensed Matter and Materials Physics
DOI: 10.1103/PhysRevB.101.125421 - Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)
DOI: 10.1117/12.2546446 - A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
physica status solidi (a) – applications and materials science (2019)
DOI: 10.1002/pssa.201900794 - Electronic and Structural Properties of Partially Crystallized Silicon Produced by Solid‐Phase Crystallization of As‐Deposited Amorphous Silicon
Journal of The Electrochemical Society (2019)
DOI: 10.1149/1.1391605 - InGaN as a substrate for AC photoelectrochemical imaging
Sensors
DOI: 10.3390/s19204386 - Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals
ACS Applied Energy Materials (2019)
DOI: 10.1021/acsaem.8b02132 - 3D strain in 2D materials: to what extent is monolayer graphene graphite?
Physical Review Letters (2019)
DOI: 10.1103/PhysRevLett.123.135501 - Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
Journal of Applied Physics (2019)
DOI: 10.1063/1.5097411 - Optical and structural properties of dislocations in InGaN
Journal of Applied Physics (2019)
DOI: 10.1063/1.5084330 - Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
JAPANESE JOURNAL OF APPLIED PHYSICS
DOI: 10.7567/1347-4065/ab0407 - Effect of humidity on the interlayer interaction of bilayer graphene
Physical Review B
DOI: 10.1103/PhysRevB.99.045402 - Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
IEEE Transactions on Electron Devices (2018)
DOI: 10.1109/ted.2018.2882533 - What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Journal of Applied Physics (2018)
DOI: 10.1063/1.5047240 - Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells
ACS Photonics (2018)
DOI: 10.1021/acsphotonics.8b00904 - Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Physical Review B (2018)
DOI: 10.1103/physrevb.98.155301 - Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Materials (2018)
DOI: 10.3390/ma11091736 - Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Journal of Applied Physics (2018)
DOI: 10.1063/1.5046801 - Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs
Microscopy and Microanalysis (2018)
DOI: 10.1017/s143192761800051x - Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Journal of Applied Physics (2018)
DOI: 10.1063/1.5027680 - Response to letter from Wayne Osborn
Astronomy and Geophysics - Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs
Electronics Letters (2018)
DOI: 10.1049/el.2018.1097 - Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Journal of Applied Physics (2018)
DOI: 10.1063/1.5027822 - Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
Journal of Applied Physics (2018)
DOI: 10.1063/1.5026267 - Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Journal of Physics Condensed Matter (2018)
DOI: 10.1088/1361-648x/aab818 - Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties
DOI: 10.1117/12.2288211 - Illuminating theory on early solar eclipse
Astronomy and Geophysics - Moon village: show us the money
Astronomy & Geophysics
DOI: 10.1093/astrogeo/aty021 - Chemical mapping of InGaN/GaN LEDs (2018)
DOI: 10.1201/9781351074629-55 - Energy-loss spectroscopy of GaN alloys and quantum wells (2018)
DOI: 10.1201/9781351074629-54 - SEM doping contrast at a Si pn junction (2018)
DOI: 10.1201/9781351074629-92 - A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM (2018)
DOI: 10.1201/9781351074636-13 - Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD (2018)
DOI: 10.1201/9781351074636-72 - Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM (2018)
DOI: 10.1201/9781351074636-65 - Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope (2018)
DOI: 10.1201/9781351074636-134 - Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
Journal of Applied Physics (2018)
DOI: 10.1063/1.5006255 - Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope
DOI: 10.1201/9781351074636 - The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Journal of Applied Physics (2017)
DOI: 10.1063/1.4986434 - Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current Imaging
DOI: 10.1109/ifws.2017.8245970 - Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
IEEE Transactions on Electron Devices (2017)
DOI: 10.1109/ted.2017.2757516 - Perspectives on Electronic and Photonic Materials (2017)
DOI: 10.1007/978-3-319-48933-9_1 - Solar eclipse of 1207 BC helps to date pharaohs
Astronomy & Geophysics
DOI: 10.1093/astrogeo/atx178 - Machine Learning Predicts Laboratory Earthquakes
Geophysical Research Letters
DOI: 10.1002/2017GL074677 - X-ray diffraction analysis of cubic zincblende III-nitrides
Journal of Physics D (2017)
DOI: 10.1088/1361-6463/aa865e - Ahmed Zewail — A Towering Visionary (2017)
DOI: 10.1142/9781786344366_0019 - Automatized convergence of optoelectronic simulations using active machine learning
Applied Physics Letters (2017)
DOI: 10.1063/1.4996233 - Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks
physica status solidi (a) – applications and materials science (2017)
DOI: 10.1002/pssa.201600835 - Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties
Nano Letters (2017)
DOI: 10.1021/acs.nanolett.7b01697 - Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)
DOI: 10.23919/irs.2017.8008166 - Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
physica status solidi (b) (2017)
DOI: 10.1002/pssb.201600666 - Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
Applied Physics Letters (2017)
DOI: 10.1063/1.4982594 - Photoluminescence studies of cubic GaN epilayers
physica status solidi (b) (2017)
DOI: 10.1002/pssb.201600733 - All-GaN-Integrated Cascode Heterojunction Field Effect Transistors
IEEE Transactions on Power Electronics (2017)
DOI: 10.1109/tpel.2016.2643499 - Single-step manufacturing process for the production of graphene-V/III LED heterostructures
Proceedings of SPIE--the International Society for Optical Engineering (2017)
DOI: 10.1117/12.2250166 - The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Ultramicroscopy (2017)
DOI: 10.1016/j.ultramic.2017.01.019 - Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2016.12.025 - Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)
Journal of Applied Physics (2017)
DOI: 10.1063/1.4973956 - Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure
Crystal Growth & Design (2017)
DOI: 10.1021/acs.cgd.6b01281 - X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface
physica status solidi (b) (2017)
DOI: 10.1002/pssb.201600664 - Carrier localization in the vicinity of dislocations in InGaN
Journal of Applied Physics (2017)
DOI: 10.1063/1.4973278 - Preventing cracking in the growth of low-cost GaN LEDs on large-area Si
ICF 2017 - 14th International Conference on Fracture - Impact of high energy electrons on nitrides for nanocathodoluminescence (2016)
DOI: 10.1002/9783527808465.emc2016.6172 - Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping (2016)
DOI: 10.1002/9783527808465.emc2016.6170 - Solid-State Lighting Based on Light Emitting Diode Technology (2016)
DOI: 10.1007/978-3-319-31903-2_5 - Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
Applied Physics Letters (2016)
DOI: 10.1063/1.4971366 - Dielectric response of wurtzite gallium nitride in the terahertz frequency range
Solid State Communications
DOI: 10.1016/j.ssc.2016.08.017 - Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Journal of Crystal Growth
DOI: 10.1016/j.jcrysgro.2016.07.038 - Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
Applied Physics Letters (2016)
DOI: 10.1063/1.4968591 - A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.
Sci Technol Adv Mater (2016)
DOI: 10.1080/14686996.2016.1244474 - Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
Journal of Applied Physics
DOI: 10.1063/1.4965989 - Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC
DOI: 10.1109/eumc.2016.7824367 - Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
Journal of Applied Physics (2016)
DOI: 10.1063/1.4961417 - Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes
AIP Advances (2016)
DOI: 10.1063/1.4959100 - High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer
Scientific Reports (2016)
DOI: 10.1038/srep29747 - Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
Semiconductor Science and Technology (2016)
DOI: 10.1088/0268-1242/31/8/085007 - Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
Applied Physics Letters (2016)
DOI: 10.1063/1.4954236 - Scalable semipolar gallium nitride templates for high-speed LEDs
SPIE Newsroom (2016)
DOI: 10.1117/2.1201605.006482 - Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique
Applied Physics Letters (2016)
DOI: 10.1063/1.4948582
