Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 5 of 10
2009
- HANSIS software tool for the automated analysis of HOLZ lines
Holec D, Rao DVS and Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (7), 837-844.
24-03-2009 - Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP
Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057.
01-03-2009 - Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices
Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (1)
05-01-2009
2008
- Equilibrium critical thickness for misfit dislocations in III-nitrides
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 104 (12)
15-12-2008 - Electrically driven single InGaN/GaN quantum dot emission
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A
Applied Physics Letters, Aip Publishing vol. 93 (23)
08-12-2008 - The effect of oxygen incorporation in sputtered scandium nitride films
Moram MA, Barber ZH and Humphreys CJ
Thin Solid Films, Elsevier vol. 516 (23), 8569-8572.
01-10-2008 - Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 93 (10)
08-09-2008 - Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose
Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465.
01-07-2008 - Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A
Journal of Applied Physics, Aip Publishing vol. 104 (1)
01-07-2008 - High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems
Oliver RA, Galtrey MJ and Humphreys CJ
Materials Science and Technology, Sage Publications vol. 24 (6), 675-681.
01-06-2008 - Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750.
01-05-2008 - The effect of wafer curvature on x-ray rocking curves from gallium nitride films
Moram MA, Vickers ME, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 103 (9)
01-05-2008 - Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (15)
14-04-2008 - Solid-State Lighting
Humphreys CJ
Mrs Bulletin, Springer Nature vol. 33 (4), 459-470.
01-04-2008 - Improvements in a-plane GaN crystal quality by a two-step growth process
Hollander JL, Kappers MJ, McAleese C and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (10)
10-03-2008 - Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617.
01-03-2008 - Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008)
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ
Advanced Materials, Wiley vol. 20 (5)
29-02-2008 - Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ
Advanced Materials, Wiley vol. 20 (5), 1038-1043.
08-02-2008 - Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A
Applied Physics Letters, Aip Publishing vol. 92 (4)
28-01-2008 - Degradation of GaN-based quantum well light-emitting diodes
Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA
Journal of Applied Physics, Aip Publishing vol. 103 (2)
15-01-2008 - The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3
Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ
Applied Surface Science, Elsevier vol. 254 (7), 2124-2130.
01-01-2008
2007
- Atom probe tomography today
Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL
Materials Today, Elsevier vol. 10 (12), 36-42.
01-12-2007 - Deep electronic states associated with a metastable hole trap in n-type GaN
Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 401, 311-314.
01-12-2007 - Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA
Physical Review Letters, American Physical Society (Aps) vol. 99 (19)
09-11-2007 - Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure
Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 76 (20)
05-11-2007 - Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs
Holec D, Costa PMFJ, Cherns PD and Humphreys CJ
Micron, Elsevier vol. 39 (6), 690-697.
22-10-2007 - Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure
Jiang N, Qiu J, Humphreys CJ and Spence JCH
Micron, Elsevier vol. 39 (6), 698-702.
22-10-2007 - Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW
Applied Physics Letters, Aip Publishing vol. 91 (17)
22-10-2007 - Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Journal of Crystal Growth vol. 308 (2), 302-308.
15-10-2007 - Dislocation reduction in gallium nitride films using scandium nitride interlayers
Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 91 (15)
08-10-2007 - Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308.
01-10-2007 - Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G
Applied Physics Letters, Aip Publishing vol. 91 (9)
27-08-2007 - 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials
Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 13 (S02), 1608-1609.
01-08-2007 - Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A
Applied Physics Letters, Aip Publishing vol. 91 (5)
30-07-2007 - Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
Moram MA, Barber ZH and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (2)
15-07-2007 - Characterization of InGaN quantum wells with gross fluctuations in width
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (1)
01-07-2007 - Atom probe provides evidence to question InGaN cluster theory
Galtrey M, Oliver R and Humphreys C
Compound Semiconductor vol. 13 (4), 27-30.
01-05-2007 - Does In form In-rich clusters in InGaN quantum wells?
Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982.
01-05-2007 - Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 90 (12)
19-03-2007 - Anisotropic strain relaxation in a-plane GaN quantum dots
Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P
Journal of Applied Physics, Aip Publishing vol. 101 (6)
15-03-2007 - Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A
Applied Physics Letters, Aip Publishing vol. 90 (6)
05-02-2007 - Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy
Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ
Applied Surface Science, Elsevier vol. 253 (8), 3937-3944.
01-02-2007 - High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 101 (3)
01-02-2007 - The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions
Way Chee AK, Rodenburg C and Humphreys CJ
Mrs Advances, Springer Nature vol. 1026 (1)
01-01-2007
2006
- A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions
Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (11)
01-12-2006 - Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures
Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (21)
20-11-2006 - Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices
Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389.
07-11-2006 - Imaging dislocation cores – the way forward
Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796.
11-10-2006 - Microstructure of epitaxial scandium nitride films grown on silicon
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Applied Surface Science, Elsevier vol. 252 (24), 8385-8387.
01-10-2006 - High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (5)
01-09-2006