Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS

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All Publications

Page 5 of 10

2009

• Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method
  Johnston CF, Kappers MJ, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 105 (7) 
  DOI 10.1063/1.3103305
  
  01-04-2009
• Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
  Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ, Campion RP
  Journal of Crystal Growth, Elsevier Bv vol. 311 (7), 2054-2057.  
  DOI 10.1016/j.jcrysgro.2008.11.084
  
  01-03-2009
• Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices
  Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 94 (1) 
  DOI 10.1063/1.3056653
  
  05-01-2009

2008

• Equilibrium critical thickness for misfit dislocations in III-nitrides
  Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 104 (12) 
  DOI 10.1063/1.3033553
  
  15-12-2008
• Electrically driven single InGaN/GaN quantum dot emission
  Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A
  Applied Physics Letters, Aip Publishing vol. 93 (23) 
  DOI 10.1063/1.3044395
  
  08-12-2008
• The effect of oxygen incorporation in sputtered scandium nitride films
  Moram MA, Barber ZH, Humphreys CJ
  Thin Solid Films, Elsevier Bv vol. 516 (23), 8569-8572.  
  DOI 10.1016/j.tsf.2008.05.050
  
  01-10-2008
• Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
  Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM et al.
  Applied Physics Letters, Aip Publishing vol. 93 (10) 
  DOI 10.1063/1.2971205
  
  08-09-2008
• Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs
  Holec D, Costa PMFJ, Cherns PD, Humphreys CJ
  Micron, Elsevier Bv vol. 39 (6), 690-697.  
  DOI 10.1016/j.micron.2007.10.013
  
  01-08-2008
• Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure
  Jiang N, Qiu J, Humphreys CJ, Spence JCH
  Micron, Elsevier Bv vol. 39 (6), 698-702.  
  DOI 10.1016/j.micron.2007.10.014
  
  01-08-2008
• Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose
  Oliver RA, Van der Laak NK, Kappers MJ, Humphreys CJ
  Journal of Crystal Growth, Elsevier Bv vol. 310 (15), 3459-3465.  
  DOI 10.1016/j.jcrysgro.2008.05.001
  
  01-07-2008
• Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
  Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW, Cerezo A
  Journal of Applied Physics, Aip Publishing vol. 104 (1) 
  DOI 10.1063/1.2938081
  
  01-07-2008
• High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems
  Oliver RA, Galtrey MJ, Humphreys CJ
  Materials Science and Technology, Sage Publications vol. 24 (6), 675-681.  
  DOI 10.1179/174328408x270301
  
  01-06-2008
• Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
  Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT, Humphreys CJ
  Journal of Crystal Growth, Elsevier Bv vol. 310 (11), 2746-2750.  
  DOI 10.1016/j.jcrysgro.2008.01.045
  
  01-05-2008
• The effect of wafer curvature on x-ray rocking curves from gallium nitride films
  Moram MA, Vickers ME, Kappers MJ, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 103 (9) 
  DOI 10.1063/1.2913514
  
  01-05-2008
• Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
  Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 92 (15) 
  DOI 10.1063/1.2908919
  
  14-04-2008
• Solid-State Lighting
  Humphreys CJ
  Mrs Bulletin, Springer Science and Business Media Llc vol. 33 (4), 459-470.  
  DOI 10.1557/mrs2008.91
  
  01-04-2008
• Improvements in a-plane GaN crystal quality by a two-step growth process
  Hollander JL, Kappers MJ, McAleese C, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 92 (10) 
  DOI 10.1063/1.2830023
  
  10-03-2008
• Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride
  Sumner J, Oliver RA, Kappers MJ, Humphreys CJ
  Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society vol. 26 (2), 611-617.  
  DOI 10.1116/1.2890705
  
  01-03-2008
• Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008)
  de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ
  Advanced Materials, Wiley vol. 20 (5) 
  DOI 10.1002/adma.200890016
  
  29-02-2008
• Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures
  de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D, Humphreys CJ
  Advanced Materials, Wiley vol. 20 (5), 1038-1043.  
  DOI 10.1002/adma.200701739
  
  08-02-2008
• Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe
  Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D et al.
  Applied Physics Letters, Aip Publishing vol. 92 (4) 
  DOI 10.1063/1.2829592
  
  28-01-2008
• Degradation of GaN-based quantum well light-emitting diodes
  Zhao LX, Thrush EJ, Humphreys CJ, Phillips WA
  Journal of Applied Physics, Aip Publishing vol. 103 (2) 
  DOI 10.1063/1.2829781
  
  15-01-2008
• The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3
  Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y, Humphreys CJ
  Applied Surface Science, Elsevier Bv vol. 254 (7), 2124-2130.  
  DOI 10.1016/j.apsusc.2007.08.075
  
  01-01-2008

2007

• Atom probe tomography today
  Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA et al.
  Materials Today, Elsevier Bv vol. 10 (12), 36-42.  
  DOI 10.1016/s1369-7021(07)70306-1
  
  01-12-2007
• Deep electronic states associated with a metastable hole trap in n-type GaN
  Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C, Humphreys CJ
  Physica B: Condensed Matter, Elsevier Bv vol. 401-402, 311-314.  
  DOI 10.1016/j.physb.2007.08.175
  
  01-12-2007
• Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot
  Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ, Taylor RA
  Physical Review Letters, American Physical Society (Aps) vol. 99 (19) 
  DOI 10.1103/physrevlett.99.197403
  
  09-11-2007
• Excitation energy dependence of the photoluminescence spectrum of anInxGa1−xN∕GaNsingle quantum well structure
  Hylton NP, Dawson P, Kappers MJ, McAleese C, Humphreys CJ
  Physical Review B, American Physical Society (Aps) vol. 76 (20) 
  DOI 10.1103/physrevb.76.205403
  
  05-11-2007
• Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]
  Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A, Smith GDW
  Applied Physics Letters, Aip Publishing vol. 91 (17) 
  DOI 10.1063/1.2783977
  
  22-10-2007
• Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
  Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ
  Journal of Crystal Growth vol. 308 (2), 302-308.  
  DOI 10.1016/j.jcrysgro.2007.09.009
  
  15-10-2007
• Dislocation reduction in gallium nitride films using scandium nitride interlayers
  Moram MA, Zhang Y, Kappers MJ, Barber ZH, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 91 (15) 
  DOI 10.1063/1.2794009
  
  08-10-2007
• Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
  Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ
  Journal of Crystal Growth, Elsevier Bv vol. 308 (2), 302-308.  
  DOI 10.1016/j.jcrysgro.2007.09.009
  
  01-10-2007
• Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
  Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B, Borghs G
  Applied Physics Letters, Aip Publishing vol. 91 (9) 
  DOI 10.1063/1.2779099
  
  27-08-2007
• 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials
  Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R et al.
  Microscopy and Microanalysis, Oxford University Press (Oup) vol. 13 (S02) 
  DOI 10.1017/s1431927607071279
  
  01-08-2007
• Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot
  Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ, Tahraoui A
  Applied Physics Letters, Aip Publishing vol. 91 (5) 
  DOI 10.1063/1.2767217
  
  30-07-2007
• Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
  Moram MA, Barber ZH, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 102 (2) 
  DOI 10.1063/1.2749484
  
  15-07-2007
• Characterization of InGaN quantum wells with gross fluctuations in width
  van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 102 (1) 
  DOI 10.1063/1.2751401
  
  01-07-2007
• Atom probe provides evidence to question InGaN cluster theory
  Galtrey M, Oliver R, Humphreys C
  Compound Semiconductor vol. 13 (4), 27-30.  
  01-05-2007
• Does In form In-rich clusters in InGaN quantum wells?
  Humphreys CJ
  Philosophical Magazine, Informa Uk Limited vol. 87 (13), 1971-1982.  
  DOI 10.1080/14786430701342172
  
  01-05-2007
• Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices
  Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O, Humphreys CJ
  Ultramicroscopy, Elsevier Bv vol. 107 (4-5), 382-389.  
  DOI 10.1016/j.ultramic.2006.10.002
  
  01-04-2007
• Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures
  van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 90 (12) 
  DOI 10.1063/1.2715166
  
  19-03-2007
• Anisotropic strain relaxation in a-plane GaN quantum dots
  Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B et al.
  Journal of Applied Physics, Aip Publishing vol. 101 (6) 
  DOI 10.1063/1.2713937
  
  15-03-2007
• Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering
  Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH, Cerezo A
  Applied Physics Letters, Aip Publishing vol. 90 (6) 
  DOI 10.1063/1.2431573
  
  05-02-2007
• Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy
  Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ, Humphreys CJ
  Applied Surface Science, Elsevier Bv vol. 253 (8), 3937-3944.  
  DOI 10.1016/j.apsusc.2006.08.028
  
  01-02-2007
• High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
  Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 101 (3) 
  DOI 10.1063/1.2434823
  
  01-02-2007
• Quantitative secondary electron energy filtering in a scanning electron microscope and its applications
  Kazemian P, Mentink SAM, Rodenburg C, Humphreys CJ
  Ultramicroscopy, Elsevier Bv vol. 107 (2-3), 140-150.  
  DOI 10.1016/j.ultramic.2006.06.003
  
  01-02-2007
• The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions
  Chee AKW, Rodenburg C, Humphreys CJ
  Mrs Proceedings, Springer Science and Business Media Llc vol. 1026 
  DOI 10.1557/proc-1026-c04-02
  
  01-01-2007

2006

• A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions
  Ong VKS, Kurniawan O, Moldovan G, Humphreys CJ
  Journal of Applied Physics, Aip Publishing vol. 100 (11) 
  DOI 10.1063/1.2369652
  
  01-12-2006
• Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures
  Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Humphreys CJ
  Applied Physics Letters, Aip Publishing vol. 89 (21) 
  DOI 10.1063/1.2392820
  
  20-11-2006
• Imaging dislocation cores – the way forward
  Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM et al.
  Philosophical Magazine, Informa Uk Limited vol. 86 (29-31), 4781-4796.  
  DOI 10.1080/14786430600776322
  
  11-10-2006
• Microstructure of epitaxial scandium nitride films grown on silicon
  Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ
  Applied Surface Science, Elsevier Bv vol. 252 (24), 8385-8387.  
  DOI 10.1016/j.apsusc.2005.11.069
  
  01-10-2006

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