Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 6 of 10
2006
- High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
Kazemian P, Mentink SAM, Rodenburg C, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (5)
01-09-2006 - Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Moram MA, Barber ZH, Humphreys CJ, Joyce TB, Chalker PR
Journal of Applied Physics, Aip Publishing vol. 100 (2)
15-07-2006 - Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy
Oliver RA, Kappers MJ, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (1)
03-07-2006 - Effects of KOH etching on the properties of Ga-polar n-GaN surfaces
Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ, Brown PD
Philosophical Magazine, Informa Uk Limited vol. 86 (16), 2315-2327.
01-06-2006 - Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens
Kazemian P, Twitchett AC, Humphreys CJ, Rodenburg C
Applied Physics Letters, Aip Publishing vol. 88 (21)
22-05-2006 - A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P et al.
Physica Status Solidi (a), Wiley vol. 203 (7), 1819-1823.
01-05-2006 - Two-photon absorption from single InGaN/GaN quantum dots
Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Andrew D. Briggs G, Kappers MJ, Humphreys CJ et al.
Physica E: Low-Dimensional Systems and Nanostructures, Elsevier Bv vol. 32 (1-2), 119-122.
01-05-2006 - Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3
Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ
Journal of Crystal Growth, Elsevier Bv vol. 289 (2), 506-514.
01-04-2006 - Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy
Xiu H, Costa PMFJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 955
01-01-2006
2005
- A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer
Cherns PD, McAleese C, Barnard JS, Kappers MJ, Humphreys CJ
Mrs Online Proceedings Library, Springer Science and Business Media Llc vol. 892 (1)
01-12-2005 - Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films
Moram MA, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ
Mrs Online Proceedings Library, Springer Science and Business Media Llc vol. 892 (1)
01-12-2005 - Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells
van der Laak NK, Oliver RA, Kappers MJ, Humphreys CJ
Mrs Online Proceedings Library, Springer Science and Business Media Llc vol. 892 (1)
01-12-2005 - Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells
Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 98 (5)
01-09-2005 - Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 86 (21)
16-05-2005 - Science and the Miracles of Exodus
Humphreys C
Europhysics News, Edp Sciences vol. 36 (3), 93-96.
01-05-2005 - Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 97 (10)
29-04-2005 - Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI
Ofori AP, Rossouw CJ, Humphreys CJ
Acta Materialia, Elsevier Bv vol. 53 (1), 97-110.
01-01-2005 - Misfit dislocations in green-emitting InGaN/GaN quantum well structures
Costa PMFJ, Datta R, Kappers MJ, Vickers ME, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 892
01-01-2005 - SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations
Oliver R, Kappers MJ, Sumner J, Datta R, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 892
01-01-2005 - The mean inner potential of GaN measured from nanowires using off-axis electron holography
Wong ASW, Ho GW, Dunin-Borkowski RE, Kasama T, Oliver RA, Costa PMFJ, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 892
01-01-2005
2004
- Growth modes in heteroepitaxy of InGaN on GaN
Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD
Journal of Applied Physics, Aip Publishing vol. 97 (1)
16-12-2004 - Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina
Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ, Hole DE
Applied Physics Letters, Aip Publishing vol. 85 (22), 5200-5202.
29-11-2004 - Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image
Datta R, Kappers MJ, Barnard JS, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 85 (16), 3411-3413.
18-10-2004 - Photoluminescence Studies of Exciton Recombination and Dephasing in Single InGaN Quantum Dots
Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al.
IEEE Transactions On Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE) vol. 3 (3), 343-347.
01-09-2004 - Temporal variation in photoluminescence from single InGaN quantum dots
Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (20), 4110-4112.
17-05-2004 - Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts
Moldovan G, Harrison I, Humphreys CJ, Kappers M, Brown PD
Materials Science and Technology, Sage Publications vol. 20 (4), 533-538.
01-04-2004 - Can a Materials Scientist Move Mount Sinai?
Humphreys C
Mrs Bulletin, Springer Science and Business Media Llc vol. 29 (4), 222-223.
01-04-2004 - Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope
Kaestner B, Schönjahn C, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (12), 2109-2111.
22-03-2004 - Electrophoretic manipulation of single DNA molecules in nanofabricated capillariesElectronic supplementary information (ESI) available: Four videoclips showing the movement of DNA molecules in nanocapillaries. See http://www.rsc.org/suppdata/lc/b3/b312592k/
Campbell LC, Wilkinson MJ, Manz A, Camilleri P, Humphreys CJ
Lab On a Chip, Royal Society of Chemistry (Rsc) vol. 4 (3), 225-225.
01-01-2004 - Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)
Charles MB, Kappers MJ, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 831
01-01-2004 - Improving Thermal Stability of LiMn[sub 2]O[sub 4] Thin Films by In Situ Coating of α-MnO[sub 2] Using High-Pressure and High-Temperature Sputtering
Chen GS, Chen G-S, Hsiao HH, Louh RF, Humphreys CJ
Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), A235-A235.
01-01-2004 - Reduction of Threading Dislocations in GaN grown on ‘c’ plane sapphire by MOVPE
Datta R, Kappers MJ, Barnard JS, Humphreys CJ
Mrs Proceedings, Springer Science and Business Media Llc vol. 831
01-01-2004
2003
- Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (26), 5419-5421.
29-12-2003 - Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (17), 3626-3627.
27-10-2003 - Time-resolved dynamics in single InGaN quantum dots
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ et al.
Applied Physics Letters, Aip Publishing vol. 83 (13), 2674-2676.
29-09-2003 - Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates
Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ, Foxon CT
Journal of Crystal Growth, Elsevier Bv vol. 256 (3-4), 237-242.
01-09-2003 - Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 94 (3), 1565-1574.
01-08-2003 - InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD, Taylor RA
Applied Physics Letters, Aip Publishing vol. 83 (4), 755-757.
28-07-2003 - Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector
Schönjahn C, Broom RF, Humphreys CJ, Howie A, Mentink SAM
Applied Physics Letters, Aip Publishing vol. 83 (2), 293-295.
14-07-2003 - Detailed interpretation of electron transport in n-GaN
Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ, Bougrioua Z
Journal of Applied Physics, Aip Publishing vol. 93 (11), 9095-9103.
01-06-2003 - Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 82 (17), 2755-2757.
28-04-2003
2002
- Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors
Schönjahn C, Humphreys CJ, Glick M
Journal of Applied Physics, Aip Publishing vol. 92 (12), 7667-7671.
15-12-2002 - Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH, Yu PW
Applied Physics Letters, Aip Publishing vol. 81 (16), 3102-3103.
14-10-2002 - Electronic structure of GaN and
Keast VJ, Scott AJ, Kappers MJ, Foxon CT, Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 66 (12)
27-09-2002 - Dopant profiling with the scanning electron microscope—A study of Si
Elliott SL, Broom RF, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (11), 9116-9122.
01-06-2002 - Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation
Chen GS, Lee PY, Boothroyd CB, Humphreys CJ
Journal of Vacuum Science &Amp; Technology a: Vacuum, Surfaces, and Films, American Vacuum Society vol. 20 (3), 986-990.
01-05-2002 - Colin Humphreys - A practical physicist having fun in the world of materials
Thomas SM, Humphreys C
Materials World vol. 10 (1), 11-11.
01-01-2002 - Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (1), 367-374.
01-01-2002 - The magic of materials
Humphreys C
Materials World vol. 10 (6), 20-22.
01-01-2002
2001
- Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy
Bright AN
Journal of Electron Microscopy, Oxford University Press (Oup) vol. 50 (6), 489-495.
01-11-2001