Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 6 of 10
2006
- Quantitative secondary electron energy filtering in a scanning electron microscope and its applications
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150.
26-07-2006 - Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR
Journal of Applied Physics, Aip Publishing vol. 100 (2)
15-07-2006 - Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy
Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (1)
03-07-2006 - Effects of KOH etching on the properties of Ga-polar n-GaN surfaces
Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327.
01-06-2006 - Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens
Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C
Applied Physics Letters, Aip Publishing vol. 88 (21)
22-05-2006 - A comparative study of near‐UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers
Zhu D, Kappers MJ, Costa PMFJ, McAleese C, Rayment FDG, Chabrol GR, Graham DM, Dawson P, Thrush EJ, Mullins JT and Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 203 (7), 1819-1823.
01-05-2006 - Two-photon absorption from single InGaN/GaN quantum dots
Jarjour AF, Green AM, Parker TJ, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Martin RW and Watson IM
Physica E Low-Dimensional Systems and Nanostructures, Elsevier vol. 32 (1-2), 119-122.
01-05-2006 - Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 289 (2), 506-514.
01-04-2006 - Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy
Xiu H, Costa PM, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ
Mrs Advances, Springer Nature vol. 955 (1)
01-01-2006
2005
- A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer
Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005 - Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005 - Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-12-2005 - Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells
Martinez CE, Stanton NM, Kent AJ, Graham DM, Dawson P, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 98 (5)
01-09-2005 - Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
Robinson JW, Rice JH, Lee KH, Na JH, Taylor RA, Hasko DG, Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD
Applied Physics Letters, Aip Publishing vol. 86 (21)
16-05-2005 - Science and the Miracles of Exodus
Humphreys C
Europhysics News, Edp Sciences vol. 36 (3), 93-96.
01-05-2005 - Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
Graham DM, Soltani-Vala A, Dawson P, Godfrey MJ, Smeeton TM, Barnard JS, Kappers MJ, Humphreys CJ and Thrush EJ
Journal of Applied Physics, Aip Publishing vol. 97 (10)
29-04-2005 - Determining the site occupancy of Ru in the L12 phase of a Ni-base superalloy using ALCHEMI
Ofori AP, Rossouw CJ and Humphreys CJ
Acta Materialia, Elsevier vol. 53 (1), 97-110.
01-01-2005 - Misfit dislocations in green-emitting InGaN/GaN quantum well structures
Costa P, Datta R, Kappers M, Vickers M and Humphreys C
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005 - The mean inner potential of GaN measured from nanowires using off-axis electron holography
Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ
Mrs Advances, Springer Nature vol. 892 (1)
01-01-2005
2004
- Growth modes in heteroepitaxy of InGaN on GaN
Oliver RA, Kappers MJ, Humphreys CJ and Briggs GAD
Journal of Applied Physics, Aip Publishing vol. 97 (1)
16-12-2004 - Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina
Chryssou CE, Kenyon AJ, Smeeton TM, Humphreys CJ and Hole DE
Applied Physics Letters, Aip Publishing vol. 85 (22), 5200-5202.
29-11-2004 - Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image
Datta R, Kappers MJ, Barnard JS and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 85 (16), 3411-3413.
18-10-2004 - Photoluminescence Studies of Exciton Recombination and Dephasing in Single Ingan Quantum Dots
Rice JH, Robinson JW, Smith JD, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Yasin S and Humphreys CJ
IEEE Transactions On Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE) vol. 3 (3), 343-347.
01-09-2004 - Temporal variation in photoluminescence from single InGaN quantum dots
Rice JH, Robinson JW, Jarjour A, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (20), 4110-4112.
17-05-2004 - Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts
Moldovan G, Harrison I, Humphreys CJ, Kappers M and Brown PD
Materials Science and Technology, Sage Publications vol. 20 (4), 533-538.
01-04-2004 - Can a Materials Scientist Move Mount Sinai?
Humphreys C
Mrs Bulletin, Springer Nature vol. 29 (4), 222-223.
01-04-2004 - Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope
Kaestner B, Schönjahn C and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 84 (12), 2109-2111.
22-03-2004 - Electrophoretic manipulation of single DNA molecules in nanofabricated capillaries
Campbell LC, Wilkinson MJ, Manz A, Camilleri P and Humphreys CJ
Lab On a Chip, Royal Society of Chemistry (Rsc) vol. 4 (3), 225-229.
01-01-2004 - Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)
Charles MB, Kappers MJ and Humphreys CJ
Mrs Advances, Springer Nature vol. 831 (1), 377-381.
01-01-2004 - Improving Thermal Stability of LiMn2 O 4 Thin Films by In Situ Coating of α MnO2 Using High-Pressure and High-Temperature Sputtering
Chen GS, Chen G-S, Hsiao HH, Louh RF and Humphreys CJ
Electrochemical and Solid-State Letters, The Electrochemical Society vol. 7 (8), a235-a238.
01-01-2004 - Reduction of Threading Dislocations in GaN grown on 'c' plane sapphire by Movpe
Datta R, Kappers MJ, Barnard JS and Humphreys CJ
Mrs Advances, Springer Nature vol. 831 (1), 678-683.
01-01-2004
2003
- Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
Smeeton TM, Kappers MJ, Barnard JS, Vickers ME and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (26), 5419-5421.
29-12-2003 - Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]
Belyaev AE, Foxon CT, Novikov SV, Makarovsky O, Eaves L, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 83 (17), 3626-3627.
27-10-2003 - Time-resolved dynamics in single InGaN quantum dots
Robinson JW, Rice JH, Jarjour A, Smith JD, Taylor RA, Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ and Arakawa Y
Applied Physics Letters, Aip Publishing vol. 83 (13), 2674-2676.
29-09-2003 - Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates
Novikov SV, Zhao LX, Winser AJ, Kappers MJ, Barnard JS, Harrison I, Humphreys CJ and Foxon CT
Journal of Crystal Growth, Elsevier vol. 256 (3-4), 237-242.
01-09-2003 - Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
Vickers ME, Kappers MJ, Smeeton TM, Thrush EJ, Barnard JS and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 94 (3), 1565-1574.
01-08-2003 - InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
Oliver RA, Briggs GAD, Kappers MJ, Humphreys CJ, Yasin S, Rice JH, Smith JD and Taylor RA
Applied Physics Letters, Aip Publishing vol. 83 (4), 755-757.
28-07-2003 - Optimizing and quantifying dopant mapping using a scanning electron microscope with a through-the-lens detector
Schönjahn C, Broom RF, Humphreys CJ, Howie A and Mentink SAM
Applied Physics Letters, Aip Publishing vol. 83 (2), 293-295.
14-07-2003 - Detailed interpretation of electron transport in n-GaN
Mavroidis C, Harris JJ, Kappers MJ, Humphreys CJ and Bougrioua Z
Journal of Applied Physics, Aip Publishing vol. 93 (11), 9095-9103.
01-06-2003 - Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
Pope IA, Smowton PM, Blood P, Thomson JD, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 82 (17), 2755-2757.
28-04-2003
2002
- Energy-filtered imaging in a field-emission scanning electron microscope for dopant mapping in semiconductors
Schönjahn C, Humphreys CJ and Glick M
Journal of Applied Physics, Aip Publishing vol. 92 (12), 7667-7671.
15-12-2002 - Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]
Cho HK, Lee JY, Sharma N, Humphreys CJ, Yang GM, Kim CS, Song JH and Yu PW
Applied Physics Letters, Aip Publishing vol. 81 (16), 3102-3103.
14-10-2002 - Electronic structure of GaN and InxGa1-xN measured with electron energy-loss spectroscopy
Keast VJ, Scott AJ, Kappers MJ, Foxon CT and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 66 (12)
15-09-2002 - Dopant profiling with the scanning electron microscope—A study of Si
Elliott SL, Broom RF and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (11), 9116-9122.
01-06-2002 - Crystallization transformations in vacuum-deposited amorphous aluminum fluoride self-developing thin-film resists induced by electron-beam irradiation
Chen GS, Lee PY, Boothroyd CB and Humphreys CJ
Journal of Vacuum Science & Technology a Vacuum Surfaces and Films, American Vacuum Society vol. 20 (3), 986-990.
01-05-2002 - Colin Humphreys - A practical physicist having fun in the world of materials
Thomas SM and Humphreys C
Materials World vol. 10 (1), 11-11.
01-01-2002 - Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
Kenyon AJ, Chryssou CE, Pitt CW, Shimizu-Iwayama T, Hole DE, Sharma N and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 91 (1), 367-374.
01-01-2002 - The magic of materials
Humphreys C
Materials World vol. 10 (6), 20-22.
01-01-2002
2001
- Analysis of contacts and V‐defects in GaN device structures by transmission electron microscopy
Bright AN, Sharma N and Humphreys CJ
Microscopy, Oxford University Press (Oup) vol. 50 (6), 489-495.
01-11-2001