Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 1 of 10
2024
- Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers
Weng Z, Wallis R, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko AE, Lee LY et al.
Acs Applied Electronic Materials, American Chemical Society (Acs) vol. 6 (10), 7276-7285.
16-09-2024
2022
- From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene
Humphreys C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 28 (S1), 2736-2737.
01-08-2022 - Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene
Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ, Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 105 (16)
13-04-2022 - Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP
Advanced Optical Materials, Wiley vol. 10 (3)
01-02-2022 - Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
Physical Review B, American Physical Society (Aps) vol. 105 (2)
05-01-2022
2021
- Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O, Gillin WP
Advanced Optical Materials, Wiley vol. 10 (3)
20-12-2021 - Mechanical properties of graphene
Applied Physics Reviews, Aip Publishing vol. 8 (2)
19-04-2021 - Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B \n101\n, 125421 (2020)]
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ, Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 103 (11)
12-03-2021 - X-ray characterisation of the basal stacking fault densities of (112̄2) GaN
Pristovsek M, Frentrup M, Zhu T, Kusch G, Humphreys CJ
Crystengcomm, Royal Society of Chemistry (Rsc) vol. 23 (35), 6059-6069.
01-01-2021
2020
- Nanomechanics of graphene oxide-bacteriophage based self-assembled porous composites
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Liu W, Rodriguez F, Dunstan DJ, Goldberg Oppenheimer P et al.
Scientific Reports, Springer Science and Business Media Llc vol. 10 (1)
24-09-2020 - Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films
Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM et al.
Acs Nano, American Chemical Society (Acs) vol. 14 (9), 11029-11039.
27-08-2020 - Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R, Nath DN
Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Pheno, American Vacuum Society vol. 38 (3)
09-04-2020 - Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ, Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 101 (12)
20-03-2020
2019
- A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN
Physica Status Solidi (a), Wiley vol. 217 (7)
29-12-2019 - InGaN as a Substrate for AC Photoelectrochemical Imaging
Zhou B, Das A, Kappers MJ, Oliver RA, Humphreys CJ, Krause S
Sensors, Mdpi Ag vol. 19 (20), 4386-4386.
11-10-2019 - Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals
Griffiths JT, Rocca Rivarola FW, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY et al.
Acs Applied Energy Materials, American Chemical Society (Acs) vol. 2 (10), 6998-7004.
07-10-2019 - 3D Strain in 2D Materials: To What Extent is Monolayer Graphene Graphite?
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ, Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 123 (13)
25-09-2019 - Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL et al.
Journal of Applied Physics, Aip Publishing vol. 125 (22)
11-06-2019 - Optical and structural properties of dislocations in InGaN
Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G et al.
Journal of Applied Physics, Aip Publishing vol. 125 (16)
23-04-2019 - Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA, Dawson P
Japanese Journal of Applied Physics, IOP Publishing vol. 58 (SC), SCCB09-SCCB09.
23-04-2019 - Effect of humidity on the interlayer interaction of bilayer graphene
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ, Dunstan DJ
Physical Review B, American Physical Society (Aps) vol. 99 (4)
02-01-2019 - Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R et al.
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 66 (1), 613-618.
01-01-2019
2018
- What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 124 (18)
09-11-2018 - Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ, Humphreys CJ
Acs Photonics, American Chemical Society (Acs) vol. 5 (11), 4437-4446.
17-10-2018 - Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA, Dawson P
Physical Review B, American Physical Society (Aps) vol. 98 (15)
02-10-2018 - Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P
Materials, Mdpi Ag vol. 11 (9), 1736-1736.
15-09-2018 - Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ, Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (10)
11-09-2018 - Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ et al.
Journal of Applied Physics, Aip Publishing vol. 124 (5)
03-08-2018 - Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ et al.
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 24 (S1), 4-5.
01-08-2018 - Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs
Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C, Thayne IG
Electronics Letters, Institution of Engineering and Technology (Iet) vol. 54 (15), 947-949.
01-07-2018 - Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P et al.
Journal of Applied Physics, Aip Publishing vol. 123 (18)
14-05-2018 - Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M et al.
Journal of Applied Physics, Aip Publishing vol. 123 (18)
10-05-2018 - Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ, Dawson P
Journal of Physics: Condensed Matter, IOP Publishing vol. 30 (17), 175303-175303.
09-04-2018 - Moon village: show us the money
Nixon D, Humphreys C, Waddington G
Astronomy &Amp; Geophysics, Oxford University Press (Oup) vol. 59 (1), 1.8-1.8.
01-02-2018 - Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL et al.
Journal of Applied Physics, Aip Publishing vol. 123 (2)
09-01-2018 - Illuminating theory on early solar eclipse
Humphreys C, Waddington G
Astronomy & Geophysics vol. 59 (1), 8-8.
01-01-2018 - Response to letter from Wayne Osborn
Humphreys C
Astronomy & Geophysics vol. 59 (4), 10-10.
01-01-2018
2017
- The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA, Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 122 (23)
21-12-2017 - Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R, Nath DN
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 64 (12), 4868-4874.
01-12-2017 - All-GaN-Integrated Cascode Heterojunction Field Effect Transistors
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ et al.
IEEE Transactions On Power Electronics, Institute of Electrical and Electronics Engineers (IEEE) vol. 32 (11), 8743-8750.
01-11-2017 - Solar eclipse of 1207 BC helps to date pharaohs
Humphreys C, Waddington G
Astronomy &Amp; Geophysics, Oxford University Press (Oup) vol. 58 (5), 5.39-5.42.
01-10-2017 - X-ray diffraction analysis of cubic zincblende III-nitrides
Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ et al.
Journal of Physics D: Applied Physics, IOP Publishing vol. 50 (43), 433002-433002.
26-09-2017 - Machine Learning Predicts Laboratory Earthquakes
Rouet‐Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ, Johnson PA
Geophysical Research Letters, American Geophysical Union (Agu) vol. 44 (18), 9276-9282.
22-09-2017 - Automatized convergence of optoelectronic simulations using active machine learning
Rouet-Leduc B, Hulbert C, Barros K, Lookman T, Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 111 (4)
24-07-2017 - Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE et al.
Nano Letters, American Chemical Society (Acs) vol. 17 (8), 4846-4852.
18-07-2017 - The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL et al.
Ultramicroscopy, Elsevier Bv vol. 176, 93-98.
01-05-2017 - Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I et al.
Applied Physics Letters, Aip Publishing vol. 110 (17)
24-04-2017 - Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ et al.
Journal of Crystal Growth, Elsevier Bv vol. 459, 185-188.
01-02-2017 - Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)
Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J et al.
Journal of Applied Physics, Aip Publishing vol. 121 (4)
24-01-2017 - Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure
Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ et al.
Crystal Growth &Amp; Design, American Chemical Society (Acs) vol. 17 (2), 474-482.
11-01-2017