Prof Sir Colin Humphreys
CBE, FREng, FRS, BSc, MA, PhD, Hon DSc, FIMMM, FInstP, FCGI, Hon FRMS
All Publications
Page 1 of 10
2024
- Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers
Weng Z, Wingfield B, Evans P, Baginski P, Kainth J, Nikolaenko A, Lee LY, Baginska J, Gillin W, Guiney I, Humphreys C and Fenwick O
Acs Applied Electronic Materials, American Chemical Society
16-09-2024
2022
- From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene
Humphreys C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 28 (S1), 2736-2737.
01-08-2022 - Graphene on silicon: Effects of the silicon surface orientation on the work function and carrier density of graphene
Sun YW, Holec D, Gehringer D, Li L, Fenwick O, Dunstan DJ and Humphreys CJ
Physical Review B, American Physical Society vol. 105 (16)
13-04-2022 - Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes (Advanced Optical Materials 3/2022)
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP
Advanced Optical Materials vol. 10 (3), 2270012-2270012.
05-02-2022 - Significant interlayer coupling in bilayer graphene and double-walled carbon nanotubes: A refinement of obtaining strain in low-dimensional materials
Sun YW, Gehringer D, Holec D, Papageorgiou DG, Fenwick O, Qureshi SM, Humphreys CJ and Dunstan DJ
Physical Review B, American Physical Society vol. 105 (2)
05-01-2022
2021
- Wafer‐Scale Graphene Anodes Replace Indium Tin Oxide in Organic Light‐Emitting Diodes
Weng Z, Dixon SC, Lee LY, Humphreys CJ, Guiney I, Fenwick O and Gillin WP
Advanced Optical Materials, Wiley, 2101675-2101675.
20-12-2021 - X-ray characterisation of the basal stacking fault densities of (112̄2) GaN
Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ
Crystengcomm, Royal Society of Chemistry vol. 23 (35), 6059-6069.
03-08-2021 - Mechanical Properties of Graphene
Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ
Applied Physics Reviews, Aip Publishing
19-04-2021 - Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ
Physical Review B vol. 103 (11), 119901-119901.
01-03-2021
2020
- Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ
Scientific Reports, Nature Publishing Group vol. 10
24-09-2020 - Solution-Processed Epitaxial Growth of Arbitrary Surface Nanopatterns on Hybrid Perovskite Monocrystalline Thin Films.
Zhang J, Guo Q, Li X, Li C, Wu K, Abrahams I, Yan H, Knight MM, Humphreys CJ and Su L
Acs Nano, American Chemical Society
27-08-2020 - Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3)
09-04-2020 - Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers
Sun Y, Holec D, Gehringer D, Fenwick O, Dunstan D and Humphreys C
Physical Review B: Condensed Matter and Materials Physics, American Physical Society vol. 101
20-03-2020
2019
- A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 217 (7)
29-12-2019 - InGaN as a substrate for AC photoelectrochemical imaging
Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S
Sensors, Mdpi
11-10-2019 - Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals
Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C
Acs Applied Energy Materials, American Chemical Society (Acs) vol. 2 (10), 6998-7004.
07-10-2019 - 3D strain in 2D materials: to what extent is monolayer graphene graphite?
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C
Physical Review Letters, American Physical Society vol. 123, 135501-135501.
25-09-2019 - Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 125 (22)
11-06-2019 - Optical and structural properties of dislocations in InGaN
Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 125 (16)
23-04-2019 - Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P
Japanese Journal of Applied Physics vol. 58
23-04-2019 - Effect of humidity on the interlayer interaction of bilayer graphene
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ
Physical Review B vol. 99 (4)
02-01-2019
2018
- Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 66 (1), 613-618.
07-12-2018 - What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 124 (18)
09-11-2018 - Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ
Acs Photonics, American Chemical Society (Acs) vol. 5 (11), 4437-4446.
17-10-2018 - Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P
Physical Review B, American Physical Society (Aps) vol. 98 (15)
01-10-2018 - Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P
Materials, Mdpi vol. 11 (9)
15-09-2018 - Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (10)
11-09-2018 - Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (5)
03-08-2018 - Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 24 (S1), 4-5.
01-08-2018 - Response to letter from Wayne Osborn
Humphreys C and Waddington G
Astronomy and Geophysics vol. 59 (4)
01-08-2018 - Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs
Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG
Electronics Letters, Institution of Engineering and Technology (Iet) vol. 54 (15), 947-949.
01-07-2018 - Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA
Journal of Applied Physics, Aip Publishing vol. 123 (18)
14-05-2018 - Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P
Journal of Applied Physics, Aip Publishing vol. 123 (18)
10-05-2018 - Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P
Journal of Physics Condensed Matter, Iop Publishing vol. 30 (17)
09-04-2018 - Illuminating theory on early solar eclipse
Humphreys C and Waddington G
Astronomy and Geophysics vol. 59 (1)
01-02-2018 - Moon village: show us the money
Nixon D, Humphreys C and Waddington G
Astronomy & Geophysics, Oxford University Press (Oup) vol. 59 (1), 1.8-1.8.
01-02-2018 - Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 123 (2)
09-01-2018
2017
- The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 122 (23)
21-12-2017 - Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
IEEE Transactions On Electron Devices, Institute of Electrical and Electronics Engineers (IEEE) vol. 64 (12), 4868-4874.
11-10-2017 - Solar eclipse of 1207 BC helps to date pharaohs
Humphreys C and Waddington G
Astronomy & Geophysics, Oxford University Press (Oup) vol. 58 (5), 5.39-5.42.
01-10-2017 - Machine Learning Predicts Laboratory Earthquakes
Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA
Geophysical Research Letters vol. 44 (18), 9276-9282.
28-09-2017 - X-ray diffraction analysis of cubic zincblende III-nitrides
Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ
Journal of Physics D, Iop Publishing vol. 50 (43)
26-09-2017 - Automatized convergence of optoelectronic simulations using active machine learning
Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 111 (4)
24-07-2017 - Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA
Nano Letters, American Chemical Society (Acs) vol. 17 (8), 4846-4852.
18-07-2017 - Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 110 (17)
24-04-2017 - All-GaN-Integrated Cascode Heterojunction Field Effect Transistors
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA
IEEE Transactions On Power Electronics, Institute of Electrical and Electronics Engineers (IEEE) vol. 32 (11), 8743-8750.
17-02-2017 - The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA
Ultramicroscopy, Elsevier vol. 176, 93-98.
03-02-2017 - Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA
Journal of Crystal Growth, Elsevier vol. 459, 185-188.
01-02-2017 - Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)
Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW
Journal of Applied Physics, Aip Publishing vol. 121 (4)
24-01-2017 - Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure
Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA
Crystal Growth & Design, American Chemical Society (Acs) vol. 17 (2), 474-482.
11-01-2017